Memory cells, methods of fabrication, and semiconductor devices

Patent metadata

Field	Value
Publication number	US-9269888-B2
Application number	US-201414256655-A
Country	US
Kind code	B2
Filing date	Apr 18, 2014
Priority date	Apr 18, 2014
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.

First claim

What is claimed is:

1. A memory cell, comprising:
a magnetic cell core comprising:
a magnetic region exhibiting a hexagonal crystal structure;
another magnetic region exhibiting the hexagonal crystal structure;
a tunnel barrier region between the magnetic region and the another magnetic region, the tunnel barrier region exhibiting another hexagonal crystal structure; and
a seed region proximate to at least one of the magnetic region and the another magnetic region, the seed region exhibiting a hexagonal crystal structure matching the hexagonal crystal structure of the at least one of the magnetic region and the another magnetic region.

2. The memory cell of claim 1 , wherein:
the magnetic region comprises hexagonal cobalt;
the another magnetic region comprises hexagonal cobalt; and
the tunnel barrier region comprises hexagonal boron nitride.

3. The memory cell of claim 1 , wherein the seed region comprises hexagonal zinc.

4. The memory cell of claim 1 , further comprising another seed region proximate to at least another of the magnetic region and the another magnetic region, the another seed region exhibiting a hexagonal crystal structure matching the hexagonal crystal structure of the another of the magnetic region and the another magnetic region.

5. The memory cell of claim 1 , wherein the seed region is disposed between a reference region and the at least one of the magnetic region and the another magnetic region.

6. A memory cell, comprising:
a magnetic cell core comprising:
a magnetic tunnel junction adjacent a seed region exhibiting a hexagonal crystal structure, the magnetic tunnel junction comprising hexagonal boron nitride between hexagonal cobalt; and
an amorphous region adjacent the seed region.

7. The memory cell of claim 6 , wherein the amorphous region is disposed between the seed region and a lower electrode.

8. The memory cell of claim 7 , wherein the amorphous region comprises a metallic glass.

9. The memory cell of claim 6 , wherein the seed region is disposed above the magnetic tunnel junction.

10. The memory cell of claim 6 , wherein the seed region is disposed below the magnetic tunnel junction.

11. A method of forming a memory cell, comprising:
forming a seed material over a substrate, the seed material exhibiting a hexagonal crystal structure; and
forming materials of a magnetic tunnel junction proximate to the seed material to effect, by at least one of epitaxial crystal growth and solid phase epitaxy, the hexagonal crystal structure in the materials, comprising:
forming a magnetic material;
forming a nonmagnetic material on the magnetic material; and
forming another magnetic material on the nonmagnetic material.

12. The method of claim 11 , wherein forming materials of a magnetic tunnel junction proximate to the seed material comprises forming the materials of the magnetic tunnel junction over the seed material to effect, by epitaxial crystal growth, the hexagonal crystal structure in the materials of the magnetic tunnel junction.

13. The method of claim 11 , wherein:
forming the materials of the magnetic tunnel junction precedes forming the seed material over the substrate; and
forming the seed material over the substrate comprises forming the seed material over the substrate and on the materials of the magnetic tunnel junction.

14. The method of claim 13 , wherein forming the materials of the magnetic tunnel junction comprises propagating the hexagonal crystal structure from the seed material to the materials of the magnetic tunnel junction to effect, by solid phase epitaxy, the hexagonal crystal structure in the materials.

15. A method of forming a memory cell, comprising:
forming a precursor structure over a substrate, comprising:
forming an amorphous material over the substrate;
forming a seed material over the amorphous material, the seed material exhibiting a hexagonal crystal structure;
forming a magnetic material on the seed material, the magnetic material exhibiting a hexagonal crystal structure matching the hexagonal crystal structure of the seed material;
forming a nonmagnetic material over the magnetic material, the nonmagnetic material exhibiting another hexagonal crystal structure matching the hexagonal crystal structure of the magnetic material; and
forming another magnetic material over the nonmagnetic material, the another magnetic material exhibiting a hexagonal crystal structure matching the another hexagonal crystal structure of the nonmagnetic material; and

patterning the precursor structure to form a magnetic cell core.

16. The method of claim 15 , further comprising annealing the precursor structure at a temperature less than a melting temperature of the seed material.

17. The method of claim 16 , wherein annealing the precursor structure at a temperature less than a melting temperature of the seed material comprises annealing at a temperature of less than about 300° C.

18. The method of claim 15 , wherein forming a precursor structure further comprises forming another seed material over the another magnetic material, the another seed material exhibiting the hexagonal crystal structure of the seed material.

19. A semiconductor device, comprising:
a spin torque transfer magnetic random access memory (STT-MRAM) array comprising:
SIT-MRAM cells, at least one STT-MRAM cell of the STT-MRAM cells comprising:
a magnetic tunnel junction comprising:
a free region comprising hexagonal cobalt;
a tunnel barrier region comprising hexagonal boron nitride; and
a fixed region comprising hexagonal cobalt; and

a conductive seed region adjacent the magnetic tunnel junction, the conductive seed region comprising a hexagonal crystal structure.

20. The semiconductor device of claim 19 , wherein the free region is disposed below the fixed region, the at least one STT-MRAM cell configured as a top-pinned magnetic memory cell.

21. The semiconductor device of claim 19 , wherein the free region is disposed above the fixed region, the at least one STT-MRAM cell configured as a bottom-pinned magnetic memory cell.

22. The semiconductor device of claim 19 , wherein the free region and the fixed region exhibit vertical magnetic orientations.

Assignees

• Micron Technology Inc

Inventors

• Meade Roy E
• Pandey Sumeet C
• Sandhu Gurtej S

Classifications

• H01L43/02 Primary

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H10N50/85

  Materials of the active region · CPC title