Multicomponent photonically intra-die bridged assembly
US-2024272393-A1 · Aug 15, 2024 · US
US9269882B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9269882-B2 |
| Application number | US-201313925931-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 25, 2013 |
| Priority date | Nov 16, 2012 |
| Publication date | Feb 23, 2016 |
| Grant date | Feb 23, 2016 |
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A thermoelectric material including a 3-dimensional nanostructure, wherein the 3-dimensional nanostructure includes a 2-dimensional nanostructure connected to a 1-dimensional nanostructure.
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What is claimed is: 1. A thermoelectric material comprising: a 3-dimensional nanostructure, wherein the 3-dimensional nanostructure comprises a plurality of 2-dimensional nanostructures connected to a 1-dimensional nanostructure, wherein adjacent 2-dimensional nanostructures of the plurality of 2-dimensional nanostructures are spaced apart from each other on the 1-dimensional nanostructure, and wherein the 1-dimensional nanostructure is exposed between the adjacent 2-dimensional nanostructures. 2. The thermoelectric material of claim 1 , wherein the 1-dimensional nanostructure is in the form of a nanowire. 3. The thermoelectric material of claim 1 , wherein the 2-dimensional nanostructures are in the form of nanoplates. 4. The thermoelectric material of claim 1 , wherein the 2-dimensional nanostructures have a shape of at least one selected from a circle, an oval, a hexagon, a rectangle, a pentagon, a triangle, a bar shape, and a needle shape. 5. The thermoelectric material of claim 1 , wherein the 1-dimensional nanostructure penetrates a surface of the 2-dimensional nanostructures. 6. The thermoelectric material of claim 1 , wherein the 1-dimensional nanostructure penetrates a plurality of the 2-dimensional nanostructures, which are disposed at a selected interval. 7. The thermoelectric material of claim 6 , wherein the plurality of 2-dimensional nanostructures are oriented in a first direction. 8. The thermoelectric material of claim 1 , wherein at least a portion of the 2-dimensional nanostructure comprises a twist such that a direction perpendicular to a plane of the 2-dimensional nanostructure varies with a distance from the 1-dimensional nanostructure. 9. The thermoelectric material of claim 1 , wherein the 1-dimensional nanostructure and the 2-dimensional nanostructures form a single unitary body. 10. The thermoelectric material of claim 1 , wherein the 3-dimensional nanostructure comprises a semiconductor comprising at least one element selected from Group III to Group VI of the Periodic Table of the Elements. 11. The thermoelectric material of claim 1 , wherein the 3-dimensional nanostructure comprises a chalcogenide compound. 12. The thermoelectric material of claim 1 , wherein the 3-dimensional nanostructure comprises at least one compound selected from Formulas 1 to 2 below: Bi 2-x Te y , wherein 0≦x<2, 0<y≦3, and Formula 1 Bi 2-x Se y , wherein 0≦x<2, 0<y≦3. Formula 2 13. The thermoelectric material of claim 1 comprising a nanobulk material comprising the 3-dimensional nanostructure. 14. The thermoelectric material of claim 1 further comprising at least one nanostructure having a form selected from nanoplates, nanodisks, nanosheets, nanowires, nanofibers, nanobelts, nanotubes, nanocrystals, and nanopowders. 15. The thermoelectric material of claim 1 further comprising a bulk thermoelectric material matrix that is chemically inactive to the 3-dimensional nanostructure. 16. The thermoelectric material of claim 15 , wherein the 3-dimensional nanostructure is disposed at a crystal interface or within a crystal structure of the bulk crystalline thermoelectric material matrix. 17. A thermoelectric element comprising the thermoelectric material of claim 1 . 18. A thermoelectric module comprising: a first electrode; a second electrode; and the thermoelectric element of claim 17 interposed between the first electrode and the second electrode. 19. The thermoelectric module of claim 18 , wherein the module is used in a thermoelectric apparatus selected from a thermoelectric generator, a thermoelectric cooler, and a thermoelectric sensor. 20. A method of preparing a thermoelectric material comprising: forming a seed by stirring a solution comprising a thermoelectric material precursor at a temperature of 100° C. or greater; and forming of a 3-dimensional nanostructure by adding a reducing agent to the solution comprising the seed to prepare the thermoelectric material, wherein the 3-dimensional nanostructure comprises a plurality of 2-dimensional nanostructures connected to a 1-dimensional nanostructure, wherein adjacent 2-dimensional nanostructures of the plurality of 2-dimensional nanostructures are spaced apart from each other on the 1-dimensional nanostructure, and wherein the 1-dimensional nanostructure is exposed between the adjacent 2-dimensional nanostructures. 21. The thermoelectric material of claim 1 , wherein a surface of each of the 2-dimensional nanostructures each independently forms an angle of about 45 to about 90 degrees with a direction of an axis of the 1-dimensional nanostructure. 22. The thermoelectric material of claim 21 , wherein the 2-dimensional nanostructures each independently have a thickness of about 10 nanometers to about 300 nanometers. 23. The thermoelectric material claim 22 , wherein a diameter of the 1-dimensional nanostructure has a difference between a maximum diameter and a minimum diameter of less than about 50 percent along a direction of a longitudinal axis of the 1-dimensional nanostructure. 24. The thermoelectric material of claim 22 , wherein the 2-dimensional nanostructures each independently have a surface area of about 3 square nanometers to about 1000 square nanometers.
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