Hole doping of graphene

Patent metadata

Field	Value
Publication number	US-9269773-B2
Application number	US-201113696189-A
Country	US
Kind code	B2
Filing date	May 5, 2011
Priority date	May 5, 2010
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

An article includes a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function. Electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.

First claim

What is claimed is:

1. An article comprising:
a layer of graphene having a first work function;
a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function; and
a source electrode and a drain electrode formed on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode,

whereby electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.

2. The article of claim 1 , wherein the hole accumulation layer has an areal density of holes of up to about 1.0×10 13 cm −2 .

3. The article of claim 1 , further comprising a substrate, wherein the layer of graphene is disposed on the substrate.

4. The article of claim 3 , wherein the layer of graphene is an epitaxial layer of graphene formed on the substrate.

5. The article of claim 3 , wherein the substrate comprises an n-type material.

6. The article of claim 5 , wherein the substrate comprises silicon carbide.

7. The article of claim 3 , wherein the layer of graphene includes a first area and a second area adjacent to the first area; and wherein the metal oxide film is disposed only on the first area of the layer of graphene.

8. The article of claim 7 , wherein a p-n junction is formed between the first area and the second area.

9. The article of claim 7 , further comprising a first electrode in contact with the first area of the layer of graphene and a second electrode in contact with the second area of the layer of graphene.

10. The article of claim 1 , wherein the metal oxide film comprises MoO 3 .

11. The article of claim 1 , wherein the metal oxide film comprises WO 3 .

12. The article of claim 1 , wherein the metal oxide film has a thickness of at least about 0.2 nm.

13. The article of claim 1 , wherein the layer of graphene is ferromagnetic.

14. The article of claim 13 , wherein the degree of magnetic hysteresis exhibited by the layer of graphene is dependent on the thickness of the metal oxide film.

15. The article of claim 13 , wherein the metal oxide film has a thickness less than about 15 nm.

16. The article of claim 15 , wherein the metal oxide film has a thickness of about 5 nm.

17. A method of doping graphene, the method comprising:
providing a layer of graphene having a first work function;
forming a metal oxide film on the layer of graphene, the metal oxide film having a second work function greater than the first work function; and
forming a source electrode and a drain electrode on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode,

whereby electrons in the layer of graphene are transferred to the metal oxide film, forming a hole accumulation layer in the layer of graphene.

18. The method of claim 17 , further comprising determining a thickness of the metal oxide film on the basis of a target concentration of holes in the hole accumulation layer.

19. The method of claim 17 , wherein providing the layer of graphene includes forming the layer of graphene on a substrate.

20. The method of claim 19 , wherein forming the layer of graphene on a substrate includes forming an epitaxial graphene film on the substrate.

21. The method of claim 19 , wherein forming the layer of graphene on a substrate includes growing the layer of graphene by chemical vapor deposition.

22. The method of claim 17 , wherein providing the layer of graphene includes forming the layer of graphene by micromechanical cleaving.

23. The method of claim 17 , wherein providing the layer of graphene includes forming the layer of graphene by reducing a graphene oxide.

24. The method of claim 17 , wherein forming the metal oxide film includes forming the metal oxide film by a vacuum thermal deposition process.

25. The method of claim 17 , wherein forming the metal oxide film includes forming the metal oxide film by a layer-by-layer growth process.

26. A photodetector comprising:
a substrate;
a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function;
a source electrode formed on the layer of graphene;
a drain electrode formed on the layer of graphene and separated from the source electrode; and
a metal oxide film disposed on the layer of graphene between the source electrode and the drain electrode, the metal oxide film having a second work function greater than the first work function,

whereby electrons are transferred from the layer of graphene to the metal oxide film, generating an intrinsic electric field near an interface between the layer of graphene and the metal oxide film.

27. The photodetector of claim 26 , wherein a photocurrent is generated in the layer of graphene when incident photons are absorbed by the layer of graphene.

28. The photodetector of claim 27 , wherein the graphene is configured to absorb photons having a frequency in the range from near-infrared to ultraviolet.

29. A device comprising:
a substrate;
a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function, the layer of graphene having a first area and a second area adjacent to the first area;
a source electrode and a drain electrode formed on the layer of graphene; and
a metal oxide film being between the source electrode and the drain electrode, the metal oxide film disposed on the first area of the layer of graphene and having a second work function greater than the first work function, whereby a p-n junction is formed between the first area and the second area.

30. The device of claim 29 , further comprising a first electrode in contact with the first area of the layer of graphene and a second electrode in contact with the second area of the layer of graphene.

31. The device of claim 29 , wherein the substrate comprises n-type silicon carbide.

32. The device of claim 29 , wherein electrons are transferred from the first area of the layer of graphene to the metal oxide film such that the first area is p-type.

33. The device of claim 29 , wherein the second region of the layer of graphene is n-type.

34. The device of claim 33 , wherein the second region of the layer of graphene is n-type due to charge transfer between the substrate and the second region of the layer of graphene.

Assignees

• Chen Wei
• Chen Zhenyu
• Wee Thye Shen Andrew
• Xie Lanfei
• Wang Xiao
• Sun Jiatao
• Ariando
• Univ Singapore

Inventors

• Chen Wei
• Chen Zhenyu
• Wee Thye Shen Andrew
• Xie Lanfei
• Wang Xiao
• Sun Jiatao
• Ariando

Classifications

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D8/01

  Manufacture or treatment · CPC title

• H10D62/882 Primary

  Graphene · CPC title

• H01L29/6609

  Electricity · mapped topic

• H01L29/1606 Primary

  Electricity · mapped topic