Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
US9269647B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9269647-B2 |
| Application number | US-201514723834-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 28, 2015 |
| Priority date | May 29, 2014 |
| Publication date | Feb 23, 2016 |
| Grant date | Feb 23, 2016 |
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A semiconductor package includes a substrate having an upper surface and a lower surface, a semiconductor chip which is mounted on the upper surface of the substrate, and in an upper surface of which a first recess portion is provided, a molding member formed such that the molding member exposes the upper surface of the semiconductor chip and covers the semiconductor chip on the upper surface of the substrate, and a first heat dissipating member formed in the first recess portion, wherein the first heat dissipating member includes moisture absorption particles and a heat dissipation molding member.
Opening claim text (preview).
What is claimed is: 1. A semiconductor package comprising: a substrate having an upper surface and a lower surface; a semiconductor chip mounted on the upper surface of the substrate, the semiconductor chip including an upper surface, and the upper surface including a first recess portion; a molding member that exposes the upper surface of the semiconductor chip and is disposed between the semiconductor chip and the upper surface of the substrate; and a first heat dissipating member formed in the first recess portion, wherein the first heat dissipating member comprises at least one moisture absorption particle and a heat dissipation molding member. 2. The semiconductor package of claim 1 , wherein the upper surface of the semiconductor chip comprises a protrusion portion defined by the first recess portion, and the protrusion portion has a matrix structure. 3. The semiconductor package of claim 1 , wherein the first recess portion has a depth that is equal to or less than 100 μm. 4. The semiconductor package of claim 1 , further comprising: a second recess portion provided on an upper surface of the molding member; and a second heat dissipating member formed in the second recess portion. 5. The semiconductor package of claim 1 , wherein the moisture absorption particle absorbs moisture around the semiconductor package at room temperature. 6. The semiconductor package of claim 1 , wherein the moisture absorption particles is formed from at least one of sodium polyacrylate, polyacrylic alcohol-based copolymer, polyacryl amide, potassium polyacrylate, polyacrylic acid, silica gel, molecular sieve, montmorillonite clay, and zeolite. 7. The semiconductor package of claim 1 , wherein the heat dissipating molding member is formed from an epoxy-group molding resin or a polyimide-group molding resin. 8. The semiconductor package of claim 1 , further comprising: a bump interposed between the semiconductor chip and the substrate; and the semiconductor chip is mounted on the substrate by using the bump as a medium. 9. The semiconductor package of claim 8 , further comprising an under-fill covering the bump between the semiconductor chip and the substrate. 10. The semiconductor package of claim 1 , wherein the substrate has an opening slit formed in a central portion thereof, and the semiconductor chip is mounted on the substrate in a face-down manner. 11. The semiconductor package of claim 1 , wherein an upper surface of the heat dissipating member is lower than the upper surface of the semiconductor chip. 12. The semiconductor package of claim 1 , wherein an upper surface of the heat dissipating member is located at the same height as the upper surface of the semiconductor chip. 13. The semiconductor package of claim 1 , wherein an upper surface of the heat dissipating member is higher than the upper surface of the semiconductor chip. 14. A semiconductor package comprising: a substrate having an upper surface and a lower surface; a semiconductor chip mounted on the upper surface of the substrate; a molding member which is formed such that the molding member covers an upper surface and a side surface of the semiconductor chip on the upper surface of the substrate, and in an upper surface of which a recess portion is formed; and a heat dissipating member formed in the recess portion, wherein the heat dissipating member comprises a plurality of moisture absorption particles and a heat dissipation molding member. 15. The semiconductor package of claim 14 , wherein a lower surface of the recess portion is higher than the upper surface of the semiconductor chip. 16. A semiconductor package comprising: a substrate; at least one semiconductor device, the at least one semiconductor device mounted on the upper surface of the substrate; a molding member, the molding member including at least one heat dissipating member, formed such that the molding member covers an upper surface and a side surface of the semiconductor chip on the upper surface of the substrate, and in an upper surface of which a recess portion is formed, the at least one heat dissipating member formed in the recess portion and the heat dissipating member including a plurality of moisture absorption particles and a heat dissipation molding member; and wherein the at least one semiconductor device includes a plurality of semiconductor devices arranged in a stacked manner. 17. The semiconductor package of claim 16 , wherein the semiconductor device includes at least one heat dissipating member disposed on an upper surface of the semiconductor device. 18. The semiconductor package of claim 16 , wherein the molding member covers the exposed surfaces of the plurality of semiconductor devices. 19. The semiconductor package of claim 16 , wherein the moisture absorption particles are formed from a moisture absorption substance. 20. The semiconductor package of claim 16 , wherein the molding member defines the exposed surface of the semiconductor device.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between stacked chips · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between stacked chips · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
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