High power ceramic on copper package

Patent metadata

Field	Value
Publication number	US-9269594-B2
Application number	US-201213343733-A
Country	US
Kind code	B2
Filing date	Jan 5, 2012
Priority date	May 6, 2009
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

According to an embodiment of a high power package, the package includes a heat sink containing enough copper to have a thermal conductivity of at least 350 W/mK, an electrically insulating attached to the heat sink with an epoxy and a semiconductor chip attached to the heat sink on the same side as the lead frame with an electrically conductive material having a melting point of 280° C. or greater.

First claim

What is claimed is:

1. A high power package, comprising:
a copper heat sink having a thermal conductivity of at least 350 W/mK;
an electrically insulating lead frame attached to the copper heat sink with an epoxy; and
a semiconductor chip attached to the copper heat sink on the same side as the electrically insulating lead frame with an electrically conductive material having a melting point of 280° C. or greater.

2. The high power package of claim 1 , wherein the copper heat sink comprises a copper alloy.

3. The high power package of claim 2 , wherein the copper alloy is C194 copper alloy.

4. The high power package of claim 1 , wherein the epoxy comprises a polyimide.

5. The high power package of claim 1 , wherein the epoxy is 2 to 5 mils thick.

6. The high power package of claim 1 , wherein the epoxy has a cure temperature of 275° C. or less.

7. The high power package of claim 1 , wherein the electrically conductive material comprises AuSn, AuSi or AuGe.

8. The high power package of claim 1 , wherein the side of the copper heat sink attached to the lead frame is generally planar.

9. The high power package of claim 1 , wherein the lead frame is a ceramic lead frame.

10. The high power package of claim 9 , wherein the ceramic lead frame comprises alumina.

11. A high power package, comprising:
a copper heat sink having a thermal conductivity of at least 350 W/mK;
an electrically insulating lead frame attached to the heat sink with an epoxy;
a semiconductor chip attached to the copper heat sink on the same side as the electrically insulating lead frame with an electrically conductive material having a melting point of 280° C. or greater;
electrically conductive leads attached to the lead frame; and
bonding wires connecting the electrically conductive leads to a side of the semiconductor chip facing away from the heat sink.

12. The high power package of claim 11 , wherein the heat sink comprises a copper alloy.

13. The high power package of claim 12 , wherein the copper alloy is C194 copper alloy.

14. The high power package of claim 11 , wherein the epoxy comprises a polyimide.

15. The high power package of claim 11 , wherein the epoxy is 2 to 5 mils thick.

16. The high power package of claim 11 , wherein the epoxy has a cure temperature of 275° C. or less.

17. The high power package of claim 11 , wherein the electrically conductive material comprises AuSn, AuSi or AuGe.

18. The high power package of claim 11 , wherein the side of the copper heat sink attached to the lead frame is generally planar.

19. The high power package of claim 11 , wherein the lead frame is a ceramic lead frame.

20. The high power package of claim 19 , wherein the ceramic lead frame comprises alumina.

Assignees

• Mohammed Anwar
• Chew Julius
• Fowlkes Donald
• Infineon Technologies Ag

Inventors

• Mohammed Anwar
• Chew Julius
• Fowlkes Donald

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/30

  Die-attach connectors · CPC title