Method for producing aluminum foil

US9267216B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9267216-B2
Application numberUS-201113883643-A
CountryUS
Kind codeB2
Filing dateNov 10, 2011
Priority dateNov 11, 2010
Publication dateFeb 23, 2016
Grant dateFeb 23, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for producing an aluminum foil of the present invention is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution containing at least (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by the general formula: R 1 R 2 R 3 R 4 N.X (R 1 to R 4 independently represent an alkyl group and are the same as or different from one another, and X represents a counteranion for the quaternary ammonium cation), then the film is separated from the substrate to obtain an aluminum foil, and the obtained aluminum foil is subjected to a heat treatment.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing an aluminum foil, comprising the steps of: forming an aluminum film on a surface of a substrate by electrolysis using a plating solution containing at least (1) a dialkyl sulfone, (2) an aluminum halide, and (3) a nitrogen-containing compound; separating the film from the substrate to obtain an aluminum foil; and subjecting the obtained foil to a heat treatment, wherein the heat treatment is conducted in an ambient atmosphere, and wherein the ambient atmosphere is at a temperature of 80 to 550° C. 2. A production method according to claim 1 , wherein the dialkyl sulfone is dimethyl sulfone. 3. An aluminum foil characterized by being produced by the method of claim 1 . 4. An aluminum foil according to claim 3 , characterized by having an aluminum content of 97.00 to 99.95 mass %, S and Cl contents of 1.50 mass % or less each, and a thickness of 1 to 15 μm. 5. An aluminum foil according to claim 3 , characterized by having a crystal orientation such that the ratio of the X-ray diffraction intensity of a (111) plane to the X-ray diffraction intensities of other crystal planes is 2.5 or more with respect to a surface of the foil. 6. A positive electrode current collector for electrical storage devices, characterized by comprising the aluminum foil of claim 3 . 7. An electrode for electrical storage devices, characterized by comprising an electrode active material supported on the aluminum foil of claim 3 . 8. An electrical storage device, characterized by comprising the electrode for electrical storage devices of claim 7 . 9. A production method according to claim 1 , characterized in that the nitrogen-containing compound is at least one selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by the general formula: R 1 R 2 R 3 R 4 N.X (R 1 to R 4 independently represent an alkyl group and are the same as or different from one another, and X represents a counteranion for the quaternary ammonium cation).

Assignees

Inventors

Classifications

  • formation of the dielectric layer · CPC title

  • by heat-treatment · CPC title

  • Electrodes · CPC title

  • C25D1/04Primary

    Wires; Strips; Foils · CPC title

  • Metal or alloys, e.g. alloy coatings (H01M4/669 take precedence) · CPC title

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What does patent US9267216B2 cover?
A method for producing an aluminum foil of the present invention is characterized in that an aluminum film is formed on a surface of a substrate by electrolysis using a plating solution containing at least (1) a dialkyl sulfone, (2) an aluminum halide, and (3) at least one nitrogen-containing compound selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary …
Who is the assignee on this patent?
Okamoto Atsushi, Hoshi Hiroyuki, Andou Setsuo, and 1 more
What technology area does this patent fall under?
Primary CPC classification C25D1/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 23 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).