MOSFET gate driving circuit for transition softening

Patent metadata

Field	Value
Publication number	US-9264035-B2
Application number	US-201313868689-A
Country	US
Kind code	B2
Filing date	Apr 23, 2013
Priority date	Apr 23, 2013
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

A power supply unit for use with thermostats or other like devices requiring power. A power supply unit may be designed to keep electromagnetic interference emissions at a minimum, particularly at a level that does not violate governmental regulations. A unit may be designed so that there is enough power for a triggering a switch at about a cross over point of a waveform of input power to the unit. Power for triggering may come from a storage source rather than line power to reduce emissions on the power line. Power for the storage source may be provided with power stealing. Power stealing may require switching transistors which can generate emissions. Gate signals to the transistors may be especially shaped to keep emissions from transistor switching at a minimum.

First claim

What is claimed is:

1. A thermostat power supply comprising:
a first terminal for connection to a first line of a power source;
a triac having a first input connected to the first terminal;
a bypass circuit having a first input connected to the first terminal;
a stealing circuit having an input connected to an output of the bypass circuit;
a power steal module having an input connected to an output of the triac and an output connected to an output of the stealing circuit;
a second terminal for connection to a load;
a zero crossing detection module having an input connected to the first terminal; and
a gate driving circuit having an input connected to an output of the zero crossing detection module, and an output connected to a second input of the power steal module.

2. The power supply of claim 1 , wherein:
the power steal module is for stealing energy from the first terminal; and
the stealing circuit is for storing stolen energy from the power steal module.

3. The power supply of claim 2 wherein the power steal module comprises one or more MOSFETs that switch on and off for stealing energy.

4. The power supply of claim 3 , wherein the gate driving circuit provides gate signals to the one or more MOSFETs for switching the one or more MOSFETs on and off.

5. The power supply of claim 4 , wherein the gate driving circuit shapes the gate signals to reduce EMI emissions from the one or more MOSFETs due to switching the one or more MOSFETs on and off.

6. The power supply of claim 3 , wherein the zero crossing detection module provides a signal to the gate driving circuit for determining times that the gate signals are to switch the one or more MOSFETs on and off relative to a zero crossing point of a waveform on the first line of the power source.

7. A power unit comprising:
a first terminal for connection to a power source;
a triggerable switch having an input connected to the first terminal;
a bypass circuit having an input connected to the first terminal;
a storage having an input connected to an output of the bypass circuit;
a power steal module having an input connected to an output of the triggerable switch and having an output connectable to a second terminal;
a second terminal for connection to a load connected to the power source;
a zero crossing detector having an input connected to the first terminal; and
a gate driving circuit having an input connected to the zero crossing detector, and having an output connected to the power steal module.

8. The unit of claim 7 , wherein:
the power steal module comprises one or more transistors that switch on and off to let current flow as deemed to the second terminal; and
the gate driving circuit provides signals to the one or more transistors that switch on and off according to the signals which are adjusted in shape to result in the switch on and off of current to obtain minimized EMI emissions from switched current.

9. The unit of claim 8 , wherein the one or more transistors are MOSFETs.

10. The unit of claim 8 , wherein the minimized EMI emissions comply with applicable government regulations.

11. The unit of claim 8 , wherein the power steal module and/or gate driving circuit further comprises:
MOSFETs as the one or more transistors;
one or more current limiting devices to control a rate of charge and discharge of one or more gates of the MOSFETs; and
latching circuitry enabled by a voltage level detector to keep a state of the MOSFETs from a previous power steal to a subsequent power steal.

12. The unit of claim 7 , further comprising a MOSFET wave protection module having an input connected to the first terminal and an output connected to an input of the gate signal generator.

13. The unit of claim 8 , wherein the gate signal generator provides the signals to the one or more transistors according to timing derived from the zero crossing detector.

14. A thermostat power system comprising:
a first terminal for connection to a power supply and load arrangement;
a second terminal for connection to the power supply and load arrangement;
a triggerable switch, having an input, connected to the first terminal;
a bypass circuit having an input connected to the first terminal;
an energy storage module having an input connected to an output of the bypass circuit;
a power steal module having an input connected to an output of the triggerable switch; and
a driving circuit for a control signal having an output connected to a second input of the power steal module; and
wherein the control signal minimizes EMI emissions from the power steal module.

15. The system of claim 14 , further comprising a wave zero crossing detector having an input connected to the first terminal and an output connected to an input of the driving circuit.

16. The system of claim 14 wherein:
the control signal from the driving circuit goes to a gate of one or more transistors to turn on or off the one or more transistors to steal power;
the turn on or off of the transistors can cause EMI emissions; and
the driving circuit adjusts a shape of the control signal to turn on or off the transistors in a manner to minimize EMI emissions.

17. The system of claim 16 , wherein the one or more transistors are MOSFETs.

18. The system of claim 16 , wherein the driving circuit provides a control signal that is timed according to a signal from the wave zero crossing detector to turn on or off the transistors in a manner to minimize EMI emissions.

19. The system of claim 14 , the triggerable switch may be selected from a group consisting of a triac, an SCR and a relay.

20. The system of claim 14 , further comprising a reverse wave protection module having an input connected to the first terminal and an output connected to a second input of the driving circuit.

Assignees

• Honeywell Int Inc

Inventors

• Tousignant Daniel
• Landry Daniel

Classifications

• H03K17/725 Primary

  for AC voltages or currents (H03K17/722, H03K17/735 take precedence) · CPC title

• H03K17/133

  in field-effect transistor switches · CPC title

• H03K2217/0081

  Power supply means, e.g. to the switch driver · CPC title

• Y10T307/615

  Cross-Sectional Technologies · mapped topic

• H03K17/16

  Modifications for eliminating interference voltages or currents · CPC title