Method to etch non-volatile metal materials
US-2015340603-A1 · Nov 26, 2015 · US
US9263669B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9263669-B2 |
| Application number | US-201414537060-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 10, 2014 |
| Priority date | Mar 13, 2013 |
| Publication date | Feb 16, 2016 |
| Grant date | Feb 16, 2016 |
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A system for self-aligning diamagnetic materials includes first and second magnets contacting each other along a contact line and having a diametric magnetization perpendicular to the contact line and a diamagnetic rod positioned to levitate above the contact line of the first and second magnets.
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What is claimed is: 1. A system for self-aligning diamagnetic materials comprising: first and second magnets contacting each other along a contact line and having a diametric magnetization perpendicular to the contact line; and a diamagnetic rod positioned to levitate above the contact line of the first and second magnets, and positioned against a target substrate such that wiring is formed thereon, wherein the first magnet and the second magnet form a magnetic trap among a plurality of magnetic traps mounted on a template substrate, the plurality of magnetic traps configured to retain a number of captured diamagnetic rods, among the plurality of diamagnetic rods, corresponding to a number of magnetic traps among the plurality of the magnetic traps, wherein an oscillation of the trapped rod along the longitudinal axis measures a magnetic susceptibility of the trapped diamagnetic rods, and wherein the magnetic susceptibility of the trapped diamagnetic rods is based on a magnetic field of a single cylindrical diametric. 2. The system of claim 1 , wherein the diamagnetic rod has a length between around ten percent and eighty percent of a length of the first and second magnets. 3. The system of claim 1 , wherein the first and second magnets are symmetrical with respect to a first vertical plane along the contact line. 4. The system of claim 1 , wherein the first and second magnets have a uniform shape in a longitudinal direction parallel to the contact line. 5. The system of claim 1 , wherein the first and second magnets are ferromagnetic. 6. The system of claim 1 , wherein the first and second magnets are cylinders. 7. The system of claim 1 , wherein the first and second magnets have triangular shapes above a horizontal plane including the contact line. 8. The system of claim 1 , wherein the diamagnetic rod is trapped at a center of a magnetic trap in a direction extending along a longitudinal axis. 9. The system of claim 1 , wherein each magnetic trap among the plurality of magnetic traps includes a first magnet and a second magnet, the plurality of magnetic traps configured to capture a respective plurality of diamagnetic rods in a formation corresponding to a predetermined arrangement of wiring on a semiconductor substrate.
characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title
of conductive or resistive materials · CPC title
of nanotubes or nanowires · CPC title
Carbon or carbon-containing materials, e.g. graphene · CPC title
by forming self-aligned vias or self-aligned contact plugs · CPC title
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