Laser processing of solar cells with anti-reflective coating

Patent metadata

Field	Value
Publication number	US-9263602-B2
Application number	US-201314061584-A
Country	US
Kind code	B2
Filing date	Oct 23, 2013
Priority date	Feb 15, 2011
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

First claim

What is claimed is:

1. A process of fabricating a solar cell, the process comprising:
forming an anti-reflective coating over an interlayer dielectric on a backside of a solar cell, the anti-reflective coating together with the interlayer dielectric being configured to have a breakdown voltage that is greater than 1×10 7 V/cm;
using a laser to form a contact hole through the interlayer dielectric and the anti-reflective coating to expose an underlying diffusion region of the solar cell; and
forming a metal contact in the contact hole to electrically connect to the diffusion region,
wherein the anti-reflective coating comprises a layer of amorphous silicon and a layer of silicon nitride.

2. The process of claim 1 wherein the breakdown voltage is configured by decreasing a refractive index of the interlayer dielectric to less than 1.95.

3. A solar cell fabricated using the process of claim 1 .

4. A process of fabricating a solar cell, the process comprising:
forming a multi-layer anti-reflective coating (ARC) over an interlayer dielectric on a backside of a solar cell, the multi-layer ARC comprising a first ARC layer and a second ARC layer, the multi-layer ARC and the interlayer dielectric layer being configured to have a breakdown voltage that is greater than 1×10 7 V/cm;
using a laser to form a contact hole through the interlayer dielectric, the first ARC layer, and the second ARC layer to expose an underlying diffusion region of the solar cell; and
forming a metal contact in the contact hole to electrically connect to the diffusion region,
wherein the first ARC layer comprises silicon nitride that is formed over the second ARC layer that comprises amorphous silicon.

5. The process of claim 4 , wherein the first ARC layer and the second ARC layer are formed in-situ.

6. The process of claim 4 , wherein the multi-layer ARC is formed over a plurality of N-type diffusion regions and a plurality of P-type diffusion regions on the backside of the solar cell.

7. The process of claim 4 , wherein the breakdown voltage is configured by decreasing a refractive index of the interlayer dielectric to less than 1.95.

Assignees

• Sunpower Corp

Inventors

• Harley Gabriel
• Smith David D
• Dennis Tim
• Waldhauer Ann
• Kim Taeseok
• Cousins Peter John

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• Y02E10/52

  PV systems with concentrators · CPC title

• H10F71/121 Primary

  The active layers comprising only Group IV materials · CPC title

• H10F10/146

  Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title

• H10F10/00

  Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G9/20) · CPC title