Enhanced adhesion of seed layer for solar cell conductive contact

Patent metadata

Field	Value
Publication number	US-9263601-B2
Application number	US-201213723901-A
Country	US
Kind code	B2
Filing date	Dec 21, 2012
Priority date	Dec 21, 2012
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

First claim

What is claimed is:

1. A solar cell, comprising:
a substrate;
an N-type emitter region disposed above the substrate; and
a conductive contact disposed on and electrically connected to the N-type emitter region, the conductive contact comprising a mixture of a metal paste portion and a P-type silicon portion, the metal paste portion and the P-type silicon portion of the mixture in contact with the N-type emitter region.

2. The solar cell of claim 1 , wherein the metal paste portion comprises aluminum (Al), and the mixture comprises an Al-Si alloy.

3. The solar cell of claim 1 , wherein the mixture has a thickness of approximately 2-10 microns, and wherein the conductive contact is a back contact of the solar cell comprising the mixture, an electroless plated nickel (Ni) layer disposed on the mixture, and an electroplated copper (Cu) layer disposed on the Ni layer.

4. A solar cell, comprising:
a substrate having an N-type diffusion region at or near a surface of the substrate; and
a conductive contact disposed above and electrically connected to the N-type diffusion region, the conductive contact comprising a mixture of a metal paste portion and a P-type silicon portion, the metal paste portion and the P-type silicon portion of the mixture in contact with the N-type diffusion region.

5. The solar cell of claim 4 , wherein the metal paste portion comprises aluminum (Al), and the mixture comprises an Al-Si alloy.

6. The solar cell of claim 4 , wherein the mixture has a thickness of approximately 2-10 microns, and wherein the conductive contact is a back contact of the solar cell comprising the mixture, an electroless plated nickel (Ni) layer disposed on the mixture, and an electroplated copper (Cu) layer disposed on the Ni layer.

7. A method of fabricating solar cell, the method comprising:
forming an adhesion layer above an N-type emitter region of a substrate;
wherein the adhesion layer comprises P-type silicon; and
subsequent to forming the adhesion layer above the N-type emitter region, forming a metal seed paste layer on the adhesion layer;
annealing the metal seed paste layer and the adhesion layer to form a conductive mixture layer in contact with the N-type emitter region of the substrate;
wherein the metal paste portion and the P-type silicon portion of the mixture in contact with the N-type emitter region; and
forming a conductive contact for the solar cell from the conductive layer.

8. The method of claim 7 , wherein annealing the metal seed paste layer and the adhesion layer comprises mixing the metal seed paste layer and the adhesion layer to form the conductive layer.

9. The method of claim 7 , wherein forming the metal paste portion comprises aluminum (Al), and the mixture comprises an Al-Si alloy.

10. The method of claim 7 , wherein the conductive layer has a thickness of approximately 2-10 microns, and wherein forming the conductive contact comprises forming a back contact of the solar cell comprising the conductive layer, an electroless plated nickel (Ni) layer formed on the conductive layer, and an electroplated copper (Cu) layer formed on the Ni layer.

Assignees

• Wu Junbo
• Johnson Michael C
• Cudzinovic Michael
• Behnke Joseph
• Zhu Xi
• Smith David D
• Hamilton Richard Sewell
• Tu Xiuwen
• Rim Seung Bum
• Sunpower Corp

Inventors

• Wu Junbo
• Johnson Michael C
• Cudzinovic Michael
• Behnke Joseph
• Zhu Xi
• Smith David D
• Hamilton Richard Sewell
• Tu Xiuwen
• Rim Seung Bum

Classifications

• H10F77/311

  for photovoltaic cells · CPC title

• H10F77/219

  Arrangements for electrodes of back-contact photovoltaic cells · CPC title

• H10F71/128

  Annealing · CPC title

• H10F10/146

  Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title

• H10F77/211 Primary

  for photovoltaic cells · CPC title