Replacement gate structures and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-9263442-B2
Application number	US-201514606224-A
Country	US
Kind code	B2
Filing date	Jan 27, 2015
Priority date	Apr 11, 2012
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

Gate structures and methods of manufacturing is disclosed. The method includes forming a continuous replacement gate structure within a trench formed in dielectric material. The method further includes segmenting the continuous replacement gate structure into separate replacement gate structures. The method further includes forming insulator material between the separate replacement gate structures.

First claim

What is claimed:

1. A structure, comprising:
a plurality of replacement gate structures formed over active regions and isolation structures; and
a dielectric material in an end to end spacing between adjacent replacement gate structures of the plurality of replacement gate structures, wherein the dielectric material is in direct contact with a liner surrounding the dielectric material and formed in an opening between the adjacent replacement gate structures, and the liner is in direct contact with the adjacent replacement gate structures of the plurality of replacement gate structures;
wherein the replacement gate structures comprise a segmented continuous structure within a trench formed in a second dielectric material,
wherein the dielectric material intersects a plurality of the segmented continuous structures.

2. The structure of claim 1 , further comprising a liner material on all sidewalls of the trench, in which the replacement gate structures are formed, such that a first end of two end replacement gate structures of the plurality of replacement gate structures are in direct contact with the liner surronding the dielectric material and a second end of the two end replacement gate structures are in direct contact with the liner material.

3. The structure of claim 1 , wherein the replacement gate structures comprise a metal or combination of metals.

4. The structure of claim 1 , wherein the dielectric material is provided in an opening between each of the plurality of replacement gate structures.

5. The structure of claim 1 , wherein the dielectric material is SiO 2 , SiCN, SiN or combinations thereof.

6. The structure of claim 1 , wherein the replacement gate structures comprise a poly material over a substrate and patterning the poly material to form a continuous strip.

7. The structure of claim 1 , further comprising a second liner formed in the trench below a material comprising the replacement gate structures.

8. The structure of claim 7 , wherein the second liner is a conductive metal liner which sets a work function and also can be a barrier to metal migration.

9. The structure of claim 7 , wherein the second liner is formed on a substrate and shallow trench isolation structure and comprises a high-k dielectric material layer and a conductive metal liner layer.

10. The structure of claim 1 , wherein the end to end spacing is 30-75 nanometers.

11. The structure of claim 1 , wherein the end to end spacing is approximately 30 nanometers.

12. The structure of claim 1 , wherein the dielectric material is planar to the replacement gate structures.

Assignees

• IBM
• Globalfoundries Inc

Inventors

• Anderson Brent A
• Nowak Edward J

Classifications

• H10D84/0153

  using gate cut processes · CPC title

• H10D84/83 Primary

  of only insulated-gate FETs [IGFET] · CPC title

• H10W10/0143

  comprising concurrently refilling multiple trenches having different shapes or dimensions · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10D84/0151

  Manufacturing their isolation regions · CPC title