Methods and materials useful for chip stacking, chip and wafer bonding

Patent metadata

Field	Value
Publication number	US-9263416-B2
Application number	US-201414457249-A
Country	US
Kind code	B2
Filing date	Aug 12, 2014
Priority date	Mar 21, 2006
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

Materials, and methods that use such materials, that are useful for forming chip stacks, chip and wafer bonding and wafer thinning are disclosed. Such methods and materials provide strong bonds while also being readily removed with little or no residues.

First claim

Therefore, we claim:

1. A method of manufacturing a semiconductor device having a plurality of chip stacks comprising:
coating a surface of a first substrate with a layer of a polymer composition comprising an adhesion promoter;
heating the coated substrate to a first temperature from 75° C. to 150° C. for 1 to 30 minutes;
imagewise exposing the coated substrate to an actinic radiation to form an exposed layer on the substrate;
developing the exposed layer;
providing a second substrate;
contacting the second substrate to the surface of the first substrate containing the polymer layer where such contacting comprises thermal compression bonding whereby causing the bonding of the surface of the first substrate containing the polymer layer with the surface of the second substrate.

2. The method according to claim 1 , wherein said method further comprises a pretreating the surface of the first substrate to a plasma prior to the coating with the polymer composition.

3. The method according to claim 2 , wherein said pretreatment to plasma includes oxygen plasma or an oxygen/argon plasma.

4. The method according to claim 1 wherein said first substrate or said second substrate is a silicon wafer.

5. The method according to claim 1 , wherein the polymer composition comprises an adhesion promoter of the Formula V:

where z is 0, 1, or 2;
R 8 is a linking group selected from C 1 to C 20 linear, branched, and cyclic alkylene, alkylene oxide containing from 2 to 6 carbon atoms, and poly(alkylene oxide), wherein the alkylene portion of the repeat groups contains from 2 to 6 carbon atoms and the poly(alkylene oxide) has a molecular weight of from 50 to 1,000;
each occurrence of R 9 is independently selected from C 1 to C 4 linear and branched alkyl; and
each occurrence of R 18 is selected from H and C 1 to C 4 linear and branched alkyl.

6. The method according claim 1 , wherein the adhesion promoter is selected from the group consisting of:
3-glycidoxypropyltrimethoxysilane;
3-glycidoxypropyltriethoxysilane;
3-aminopropyl triethoxysilane; and mixtures in any combination thereof.

7. The method according to claim 1 , wherein the polymer composition comprises at least two distinct types of repeat units derived from norbornene-type monomers represented by Formula I:

where X is selected from —CH 2 —, —CH 2 —CH 2 — and —O—;
m is an integer from 0 to 5; and
each occurrence of R 1 , R 2 , R 3 , and R 4 is independently selected from one of the following groups:
H, C 1 to C 25 linear, branched, and cyclic alkyl, aryl, aralkyl, alkaryl, alkenyl, and alkynyl; or
C 1 to C 25 linear, branched, and cyclic alkyl, aryl, aralkyl, alkaryl, alkenyl, and alkynyl containing one or more hetero atoms selected from O, N, and Si; or
a glycidyl ether moiety in accordance with Formula II:

where A is a linking group selected from C 1 to C 6 linear, branched, and cyclic alkylene and R 23 and R 24 are each independently selected from H, methyl, and ethyl; or
any combination of two of R 1 , R 2 , R 3 , and R 4 linked together by a linking group selected from C 1 to C 25 linear, branched, and cyclic alkylene and alkylene aryl; and
with the proviso that one of the at least two distinct types of monomers in accordance with Formula I encompasses at least one glycidyl ether pendant group and another of the at least two distinct types of monomers encompasses at least one aralkyl pendant group.

8. The method according to claim 7 , wherein the two or more distinct types of repeat units of Formula I that include a glycidyl ether pendent group of Formula II, and an aralkyl pendent group.

9. The method according to claim 8 , wherein the linking group A of the glycidyl ether pendent group of Formula II is selected from methylene, ethylene, propylene, isopropylene, butylene, isobutylene and hexylene.

10. The method according to claim 9 , wherein the glycidyl ether pendent group of Formula II is selected from; glycidyl methyl ether, glycidyl ethyl ether, glycidyl propyl ether, glycidyl isopropyl ether, glycidyl butyl ether, glycidyl isobutyl ether and glycidyl hexyl ether.

11. The method according to claim 1 , wherein the polymer composition is selected from a norbornene-type polymer comprising phenethyl, glycidyl methyl ether and decyl repeat units derived from phenethyl norbornene (PENB), glycidyl methyl ether norbornene (MGENB) and decyl norbornene (Decyl NB).

12. The method according to claim 7 , wherein the first norbornene-type monomer is glycidyl methyl ether norbornene (MGENB) or epoxy octyl norbornene (EONB), the second norbornene-type monomer is phenethyl norbornene (PENB) and the third norbornene-type monomer is decyl norbornene (Decyl NB) or dodecyl norbornene (Dodecyl NB).

13. The method according to claim 1 , wherein the polymer composition further comprises one or more additives selected from photosensitizer components, photoinitiator components, reactive and non-reactive solvents, catalyst scavengers, acid scavengers, adhesion promoters and antioxidants.

14. The method according to claim 13 , wherein the non-reactive solvent is 2-heptanone (MAK), the photosensitizer is 4-methylphenyl-4-(1 methylethyl)phenyliodonium tetrakis(pentafluorophenyl)borate, the photoinitiator is 1-chloro-4-propoxy-9H-thioxanthone, the antioxidant is 3,5-di-tert-butyl-4-hydroxyhydrocinnamate, the acid scavenger is phenothiazine and the adhesion promoter is bis[3-(triethoxysilyl)propyl]disulfide.

15. The method according to claim 1 , wherein said thermal compression bonding comprises a single cure cycle comprising heating said first and second substrate to and holding at a cure temperature under compression.

16. The method according to claim 15 , wherein said thermal compression bonding comprises heating to a temperature from 120° C. to 300° C. for 2 minutes to 10 hours, and compression is conducted at a pressure of from 5 psi to 100 psi.

17. The method according to claim 1 , wherein said thermal compression bonding comprises:
a first cure cycle comprising heating said first and second substrates to and holding at a first cure temperature under compression, and
a second cure cycle comprising heating said first and second substrates to and holding at a second cure temperature in the absence of compression,
where said second cure temperature is greater than said first cure temperature.

18. The method according to claim 17 wherein said first cure temperature and said second cure temperature are each independently selected from 110° C. to 300° C., and compression is conducted at a pressure of from 5 psi to 100 psi.

19. The method according to claim 17 wherein said first cure temperature and said second cure temperature are each independently selected from 110° C. to 200° C.

20. A method of manufacturing a semiconductor device having a plurality of chip stacks comprising:
forming a layer of a polymer overlying a surface of a first substrate;
exposing the layer to actinic radiation;
developing the exposed layer;
providing a second substrate; and
contacting the second substrate to the polymer layer, where such contacting comprises

Assignees

• Promerus Llc
• Sumitomo Bakelite Co

Inventors

• Apanius Christopher
• Shick Robert A
• Ng Hendra
• Bell Andrew
• Zhang Wei
• Neal Phillip S

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title