Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US9263372B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9263372-B2 |
| Application number | US-201213721407-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2012 |
| Priority date | Dec 23, 2011 |
| Publication date | Feb 16, 2016 |
| Grant date | Feb 16, 2016 |
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A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a phenoxy resin including a fluorene-substituted phenoxy resin; and a radically polymerizable resin including a fluorene-substituted acrylate.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including: a phenoxy resin including a fluorene-substituted phenoxy resin; and a radically polymerizable resin including a fluorene-substituted acrylate, wherein the anisotropic conductive film has: an adhesive strength of about 700 gf/cm or more, as measured after pressing at 160° C. and 3 MPa for 5 seconds, and a storage modulus of about 1,000 MPa or more at a degree of cure of 90% or more. 2. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film includes: about 20 to about 60 parts by weight of the phenoxy resin including the fluorene-substituted phenoxy resin, based on 100 parts by weight of a solid content of the anisotropic conductive film, and about 40 to about 80 parts by weight of the radically polymerizable resin including the fluorene-substituted acrylate, based on 100 parts by weight of the solid content of the anisotropic conductive film. 3. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film includes: about 5 to about 50 parts by weight of the fluorene-substituted phenoxy resin, based on 100 parts by weight of the solid content of the anisotropic conductive film and about 5 to about 40 parts by weight of the fluorene-substituted acrylate, based on 100 parts by weight of the solid content of the anisotropic conductive film. 4. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film further includes an acrylic-modified epoxy resin. 5. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film further includes a urethane acrylate. 6. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film has a tensile strength of about 60 to about 200 gf/mm 2 .
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comprising polymers · CPC title
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