Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors

Patent metadata

Field	Value
Publication number	US-9263296-B2
Application number	US-201214006744-A
Country	US
Kind code	B2
Filing date	Mar 19, 2012
Priority date	Mar 22, 2011
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

First claim

The invention claimed is:

1. A chemical-mechanical polishing (CMP) composition, comprising:
inorganic particles, organic particles, or a mixture or composite thereof,
an N-heterocyclic compound as corrosion inhibitor,
a further corrosion inhibitor, which is an adduct of an amine and a carboxylic acid comprising an amide moiety, in a concentration of from 0.01 to 5 wt %,
an oxidizing agent,
a complexing agent,
and an aqueous medium,
wherein the CMP composition has a pH of from 3 to less than 7.

2. The CMP composition according to claim 1 , wherein the N-heterocyclic compound is an imidazole, pyrazole, triazole, tetrazole, or a derivative thereof.

3. The CMP composition according to claim 2 , wherein the N-heterocyclic compound is a triazole or a derivative thereof.

4. The CMP composition according to claim 1 , wherein the amine is a trialkanolamine.

5. The CMP composition according to claim 1 , wherein the carboxylic acid comprising an amide moiety is an unsaturated monocarboxylic acid comprising one amide moiety.

6. The CMP composition according to claim 1 , wherein the particles are silica particles.

7. The CMP composition according to claim 1 , wherein the oxidizing agent is a peroxo compound.

8. The CMP composition according to claim 1 , wherein the complexing agent is a carboxylic acid having at least two COOH groups, N-containing carboxylic acid, N-containing sulfonic acid, N-containing sulfuric acid, N-containing phosphonic acid, N-containing phosphoric acid, or a salt thereof.

9. The CMP composition according to claim 1 , comprising:
silica particles, in a concentration of from 0.01 to 2 wt. %,
a triazole, or its derivative as corrosion inhibitor, in a concentration of from 0.005 to 1 wt. %,
a further corrosion inhibitor which is an adduct of a trialkanolamine and an unsaturated carboxylic acid comprising at least one amide moiety,
a peroxide or persulfate as oxidizing agent, in a concentration of from 0.05 to 10 wt. %,
a complexing agent selected from the group consisting of a carboxylic acid having at least two COOH groups, an N-containing carboxylic acid, N-containing sulfonic acid, N-containing sulfuric acid, N-containing phosphonic acid, N-containing phosphoric acid, or a salt thereof, in a concentration of 0.01 to 5 wt. %, and
an aqueous medium.

10. A process of manufacturing a semiconductor device, the process comprising chemical-mechanical polishing a metal-containing substrate in the presence of the CMP composition of claim 1 .

11. A process of polishing a substrate, the process comprising polishing the substrate with the CMP composition of claim 1 , wherein the substrate is suitable for an application in the semiconductor industry.

12. The CMP composition of claim 1 , which has a pH of from 3 to 6.

13. The CMP composition of claim 1 , wherein the corrosion inhibitor decreases a hot static etch rate of the surface such that a hot static etch rate for a reference composition lacking the further corrosion inhibitor is reduced by at least 75% at a concentration of 0.001 mol/L of the corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the corrosion inhibitor and the further corrosion inhibitor,
wherein the further corrosion inhibitor decreases a hot static etch rate such that a hot static etch rate for a reference composition lacking the corrosion inhibitor is reduced by not more than 55% at a concentration of 0.001 mol/L of the further corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the corrosion inhibitor and the further corrosion inhibitor.

14. A chemical-mechanical polishing (CMP) composition, comprising:
inorganic particles, organic particles, or a mixture or composite thereof,
an N-heterocyclic compound as corrosion inhibitor,
a further corrosion inhibitor which is a (prop-2-ynyloxy)-substituted alcohol, in a concentration of from 0.01 to 5 wt %,
an oxidizing agent,
a complexing agent,
and an aqueous medium,
wherein the CMP composition has a pH of from 3 to less than 7.

15. The CMP composition according to claim 14 , wherein the N-heterocyclic compound is an imidazole, pyrazole, triazole, tetrazole, or a derivative thereof.

16. The CMP composition according to claim 15 , wherein the N-heterocyclic compound is a triazole or its derivative.

17. The CMP composition according to claim 14 , wherein the further corrosion inhibitor is 2-(prop-2-ynyloxy)ethanol, 2-(prop-2-ynyloxy)propanol, 2-(prop-2-ynyloxy)butanol, or 2-(prop-2-ynyloxy)pentanol.

18. The CMP composition according to claim 14 , wherein the particles are silica particles.

19. The CMP composition according to claim 14 , wherein the oxiding agent is a peroxo compound.

20. The CMP composition according to claim 14 , wherein the complexing agent is a carboxylic acid having at least two COOH groups, N-containing carboxylic acid, N-containing sulfonic acid, N-containing sulfuric acid, N-containing phosphonic acid, N-containing phosphoric acid, or a salt thereof.

21. A process of manufacturing a semiconductor device, the process comprising chemical-mechanical polishing a metal-containing substrate in the presence of the CMP composition of claim 14 .

22. A process of polishing a substrate, the process comprising polishing the substrate with the CMP composition of claim 14 , wherein the substrate is suitable for an application in the semiconductor industry.

23. The CMP composition of claim 14 , which has a pH of from 3 to 6.

24. A chemical mechanical polishing process, the process comprising:
chemical mechanical polishing a surface of a metal-comprising substrate with a chemical mechanical polishing composition,
wherein the composition comprises:
inorganic particles, organic particles, or a mixture or composite thereof,
an oxidizing agent,
a complexing agent,
an aqueous medium,
a strong corrosion inhibitor,
and a weak corrosion inhibitor, which is an adduct of an amine and a carboxylic acid comprising an amide moiety, in a concentration of from 0.01 to 5 wt %,
wherein the composition has a pH of from 3 to less than 7,
wherein the strong corrosion inhibitor is capable of strongly decreasing a hot static etch rate of the surface such that a hot static etch rate for a reference composition lacking the weak corrosion inhibitor is reduced by at least 75% at a concentration of 0.001 mol/L of the strong corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the strong corrosion inhibitor and the weak corrosion inhibitor,
wherein the weak corrosion inhibitor is capable of weakly decreasing a hot static etch rate such that a hot static etch rate for a reference composition lacking the strong corrosion inhibitor is reduced by not more than 55% at a concentration of 0.001 mol/L of the weak corrosion inhibitor compared to a hot static etch rate for a reference composition lacking both the strong corrosion inhibitor and the weak corrosion inhibitor.

25. The process of claim 24 , wherein the composition has a pH of from 3 to 6.

Assignees

• Noller Bastian
• Lauter Michael
• Sugiharto Albert Budiman
• Li Yuzhuo
• Rushing Kenneth
• Franz Diana
• Böhn Roland
• Basf Se

Inventors

• Noller Bastian
• Lauter Michael
• Sugiharto Albert Budiman
• Li Yuzhuo
• Rushing Kenneth
• Franz Diana
• Böhn Roland

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10P95/60

  Mechanical treatments, e.g. by ultrasounds · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title