Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device
US9263258B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9263258-B2 |
| Application number | US-32064209-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 30, 2009 |
| Priority date | Feb 1, 2008 |
| Publication date | Feb 16, 2016 |
| Grant date | Feb 16, 2016 |
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Abstract
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Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection L sapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth. The GaN layer is grown so that the a-axis of the layer is perpendicular to the exposed R-plane surfaces of the sapphire substrate; the c-axis of the layer is parallel to the axis direction L sapph-AM of the sapphire substrate; and the m-axis of the layer, which is inclined by 30° from the a-axis thereof, is perpendicular to the main surface (inclined by 30° from the exposed R-plane surfaces) of the sapphire substrate.
First claim
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What is claimed is: 1. A method for producing a Group III nitride-based semiconductor, said method comprising: providing a main surface of a sapphire substrate, wherein an angle between the main surface and an R-plane (1-102) of a sapphire is 30° and a line of intersection formed by the R-plane (1-102) and an A-plane (11-20) of the sapphire exists on the main surface, the A-plane (11-20) being perpendicular to the R-plane (1-102), and a direction of the line being a [−1101] direct…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9263258B2 cover?
- Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection L sapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxid…
- Who is the assignee on this patent?
- Nagai Seiji, Yamazaki Shiro, Sato Takayuki, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3416. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 16 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).