Moveable current sensor for increasing ion beam utilization during ion implantation

Patent metadata

Field	Value
Publication number	US-9263231-B2
Application number	US-201314050952-A
Country	US
Kind code	B2
Filing date	Oct 10, 2013
Priority date	Oct 10, 2013
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

An ion implant apparatus and moveable ion beam current sensor are described. Various examples provide moving the ion beam current sensor during an ion implant process such that a distance between the ion beam current sensor and a substrate is maintained during scanning of the ion beam toward the substrate. The ion beam current sensor is disposed on a moveable support configured to move the ion beam current sensor in a first direction corresponding to the scanning of the ion beam while the substrate is moved in a second direction.

First claim

The invention claimed is:

1. An ion implant apparatus comprising:
an ion source configured to generate an ion beam;
a scanner configured to scan the ion beam back and forth in a first direction in a scan plane;
a platen configured to support a substrate when the ion beam is incident on the substrate and configured to drive the substrate in a second direction orthogonal to the scan plane, a front surface of the substrate defining a substrate plane;
an ion beam current sensor…

Assignees

• Varian Semiconductor Equipment

Inventors

• Chang Shengwu

Classifications

• H10P30/20 Primary

  Electricity · mapped topic

• H01L21/265

  Electricity · mapped topic

• H01J37/3171

  Electricity · mapped topic

• H01J37/244 Primary

  Electricity · mapped topic

• H01J2237/30455

  Electricity · mapped topic