Chemical vapor deposition graphene foam electrodes for pseudo-capacitors

US9263196B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9263196-B2
Application numberUS-201113519569-A
CountryUS
Kind codeB2
Filing dateApr 20, 2011
Priority dateApr 20, 2011
Publication dateFeb 16, 2016
Grant dateFeb 16, 2016

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Abstract

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Technologies are generally described for a porous graphene electrode material is described herein that may incorporate a three-dimensional open-cell graphene structure fabricated via chemical vapor deposition onto a metal foam. After the graphene is deposited, the metal foam may be dissolved, leaving a three-dimensional open-cell graphene structure that may include single or few layer graphene. Pseudo-capacitive materials, such as RuO 2 , Fe 3 O 4 , or MnO 2 , may be deposited within the pores of the three-dimensional open-cell graphene structure to form the porous graphene electrode material. The porous graphene electrode material may have a specific capacitance comparable to chemically modified graphene (CMG) electrodes. The porous graphene electrode material may also have a conductivity greater than CMG electrodes of equivalent surface area. Use of the porous graphene electrode material in capacitors may result in significant improvements in specific power compared to CMG based capacitors.

First claim

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What is claimed is: 1. A graphene-based electronic apparatus, comprising: a first electrode that includes: a metal foam substrate; and a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein the chemical vapor deposition uses a gas mixture of CH 4 :H 2 :Ar having a molar ratio of CH 4 :H 2 from about 0…

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What does patent US9263196B2 cover?
Technologies are generally described for a porous graphene electrode material is described herein that may incorporate a three-dimensional open-cell graphene structure fabricated via chemical vapor deposition onto a metal foam. After the graphene is deposited, the metal foam may be dissolved, leaving a three-dimensional open-cell graphene structure that may include single or few layer graphene.…
Who is the assignee on this patent?
Yager Thomas A, Empire Technology Dev Llc
What technology area does this patent fall under?
Primary CPC classification H01G11/36. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 16 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).