Chip form ultracapacitor
US-12165808-B2 · Dec 10, 2024 · US
US9263196B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9263196-B2 |
| Application number | US-201113519569-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 20, 2011 |
| Priority date | Apr 20, 2011 |
| Publication date | Feb 16, 2016 |
| Grant date | Feb 16, 2016 |
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Technologies are generally described for a porous graphene electrode material is described herein that may incorporate a three-dimensional open-cell graphene structure fabricated via chemical vapor deposition onto a metal foam. After the graphene is deposited, the metal foam may be dissolved, leaving a three-dimensional open-cell graphene structure that may include single or few layer graphene. Pseudo-capacitive materials, such as RuO 2 , Fe 3 O 4 , or MnO 2 , may be deposited within the pores of the three-dimensional open-cell graphene structure to form the porous graphene electrode material. The porous graphene electrode material may have a specific capacitance comparable to chemically modified graphene (CMG) electrodes. The porous graphene electrode material may also have a conductivity greater than CMG electrodes of equivalent surface area. Use of the porous graphene electrode material in capacitors may result in significant improvements in specific power compared to CMG based capacitors.
Opening claim text (preview).
What is claimed is: 1. A graphene-based electronic apparatus, comprising: a first electrode that includes: a metal foam substrate; and a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein the chemical vapor deposition uses a gas mixture of CH 4 :H 2 :Ar having a molar ratio of CH 4 :H 2 from about 0…
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
Chemistry & Metallurgy · mapped topic
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