Semiconductor system
US-2015002199-A1 · Jan 1, 2015 · US
Semiconductor device
US9263115B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9263115-B2 |
| Application number | US-201414476433-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 3, 2014 |
| Priority date | Sep 3, 2013 |
| Publication date | Feb 16, 2016 |
| Grant date | Feb 16, 2016 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method includes measuring a first pulse width of a resistance variable memory cell coupled between a first terminal and a second terminal, the first pulse width including a period from starting a first data writing of the resistance variable memory cell by applying a voltage between the first and second terminals to ending the first data writing of the resistance variable memory cell, and measuring a second pulse width of the resistance variable memory cell coupled between the first and the second terminal. The method includes setting longer one of the first and second pulse widths in a first storage area as a pulse width to be used in program.
First claim
Opening claim text (preview).
What is claimed is: 1. A method, comprising: measuring a first pulse width of a resistance variable memory cell coupled between a first terminal and a second terminal, the first pulse width including a period from starting a first data writing of the resistance variable memory cell by applying a voltage between the first and second terminals to ending the first data writing of the resistance variable memory cell; measuring a second pulse width of the resistance variable memory c…
Assignees
Inventors
Classifications
- G11C11/1675Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9263115B2 cover?
- A method includes measuring a first pulse width of a resistance variable memory cell coupled between a first terminal and a second terminal, the first pulse width including a period from starting a first data writing of the resistance variable memory cell by applying a voltage between the first and second terminals to ending the first data writing of the resistance variable memory cell, and mea…
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification G11C11/1675. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 16 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).