Light-transmitting conductive film, display device, electronic device, and manufacturing method of light-transmitting conductive film

Patent metadata

Field	Value
Publication number	US-9260779-B2
Application number	US-78189410-A
Country	US
Kind code	B2
Filing date	May 18, 2010
Priority date	May 21, 2009
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

First claim

What is claimed is:

1. A manufacturing method of a light-transmitting conductive film, comprising:
forming a light-transmitting conductive film on an insulating layer by a sputtering method in an atmosphere including a rare gas; and
performing heat treatment on the light-transmitting conductive film,
wherein the light-transmitting conductive film is electrically connected to one of a source electrode and a drain electrode of a transistor through an opening in the insulating layer,
wherein the light-transmitting conductive film comprises conductive oxynitride including zinc and aluminum,
wherein the sputtering method is carried out using a target including zinc oxide and aluminum over which a chip of aluminum nitride is set, and
wherein an amount of aluminum included in the chip of aluminum nitride is larger than an amount of aluminum included in the target including the zinc oxide and the aluminum.

2. The manufacturing method according to claim 1 ,
wherein the sputtering method is carried out using a target including zinc oxide and aluminum nitride.

3. The manufacturing method according to claim 1 ,
wherein the sputtering method is carried out using a target including zinc oxide over which a chip of aluminum nitride is set.

4. The manufacturing method according to claim 1 ,
wherein the heat treatment is performed under an atmosphere including an inert gas.

5. The manufacturing method according to claim 1 ,
wherein the heat treatment is performed under a nitrogen atmosphere.

6. The manufacturing method according to claim 1 ,
wherein the heat treatment is performed at 250° C. to 350° C.

7. A manufacturing method of a light-transmitting conductive film, comprising:
forming a light-transmitting conductive film on an insulating layer by a sputtering method in an atmosphere including only a rare gas; and
performing heat treatment on the light-transmitting conductive film,
wherein the light-transmitting conductive film is electrically connected to one of a source electrode and a drain electrode of a transistor through an opening in the insulating layer,
wherein the light-transmitting conductive film comprises conductive oxynitride including zinc and aluminum,
wherein the sputtering method is carried out using a target including zinc oxide and aluminum over which a chip of aluminum nitride is set, and
wherein an amount of aluminum included in the chip of aluminum nitride is larger than an amount of aluminum included in the target including the zinc oxide and the aluminum.

8. The manufacturing method according to claim 7 ,
wherein the sputtering method is carried out using a target including zinc oxide and aluminum nitride.

9. The manufacturing method according to claim 7 ,
wherein the sputtering method is carried out using a target including zinc oxide over which a chip of aluminum nitride is set.

10. The manufacturing method according to claim 7 ,
wherein the heat treatment is performed under an atmosphere including an inert gas.

11. The manufacturing method according to claim 7 ,
wherein the heat treatment is performed under a nitrogen atmosphere.

12. The manufacturing method according to claim 7 ,
wherein the heat treatment is performed at 250° C. to 350° C.

13. A manufacturing method of a light-transmitting conductive film, comprising:
forming a light-transmitting conductive film on an insulating layer by a sputtering method in an atmosphere including a rare gas and an oxygen gas; and
performing heat treatment on the light-transmitting conductive film,
wherein the light-transmitting conductive film is electrically connected to one of a source electrode and a drain electrode of a transistor through an opening in the insulating layer,
wherein the light-transmitting conductive film comprises conductive oxynitride including zinc and aluminum,
wherein a concentration of the oxygen gas is higher than or equal to 0.10%,
wherein the sputtering method is carried out using a target including zinc oxide and aluminum over which a chip of aluminum nitride is set, and
wherein an amount of aluminum included in the chip of aluminum nitride is larger than an amount of aluminum included in the target including the zinc oxide and the aluminum.

14. The manufacturing method according to claim 13 ,
wherein the sputtering method is carried out using a target including zinc oxide and aluminum nitride.

15. The manufacturing method according to claim 13 ,
wherein the sputtering method is carried out using a target including zinc oxide over which a chip of aluminum nitride is set.

16. The manufacturing method according to claim 13 ,
wherein the heat treatment is performed under an atmosphere including an inert gas.

17. The manufacturing method according to claim 13 ,
wherein the heat treatment is performed under a nitrogen atmosphere.

18. The manufacturing method according to claim 13 ,
wherein the heat treatment is performed at 250° C. to 350° C.

Assignees

• Koezuka Junichi
• Maruyama Tetsunori
• Saito Takayuki
• Imoto Yuki
• Uto Noriaki
• Endo Yuta
• Shionoya Hitomi
• Hirohashi Takuya
• Yamazaki Shunpei
• Semiconductor Energy Lab

Inventors

• Koezuka Junichi
• Maruyama Tetsunori
• Saito Takayuki
• Imoto Yuki
• Uto Noriaki
• Endo Yuta
• Shionoya Hitomi
• Hirohashi Takuya
• Yamazaki Shunpei

Classifications

• H01B1/02 Primary

  mainly consisting of metals or alloys · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C23C14/541

  Heating or cooling of the substrates · CPC title

• C23C14/5806

  Thermal treatment · CPC title

• C23C14/0676

  Oxynitrides · CPC title