Semiconductor device and driving method thereof
US-9076520-B2 · Jul 7, 2015 · US
US9257971B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9257971-B2 |
| Application number | US-201414541305-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 14, 2014 |
| Priority date | Dec 3, 2010 |
| Publication date | Feb 9, 2016 |
| Grant date | Feb 9, 2016 |
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A semiconductor device includes a first latch, a second latch and a transistor whose semiconductor layer contains an oxide semiconductor. An input of the first latch is electrically connected to one of a source and a drain of the transistor, an output of the first latch is electrically connected to an input of the second latch, and an output of the second latch is electrically connected to the other of the source or the drain of the transistor.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first latch: a second latch; and a transistor comprising an oxide semiconductor in a semiconductor layer, wherein an input of the first latch is electrically connected to one of a source and a drain of the transistor, wherein an output of the first latch is electrically connected to an input of the second latch, wherein an output of the second latch is electrically connected to the other of the source or the dra…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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