Semiconductor device

Patent metadata

Field	Value
Publication number	US-9257830-B2
Application number	US-201213674302-A
Country	US
Kind code	B2
Filing date	Nov 12, 2012
Priority date	Dec 14, 2011
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

In a semiconductor device, a surge voltage is lowered on turning OFF of a switching element, and output current is reduced on turning ON of the switching element in a non-saturated condition to achieve a reduced amount of self-heating. The semiconductor device can comprise a semiconductor switching element, an overvoltage protection circuit, and a resistance circuit to transmit a control signal for turning the switching element ON and OFF to a control terminal of the switching element. The semiconductor device can further comprise a voltage detecting switch that receives a signal corresponding to a voltage appearing at the output terminal of the switching element on turning OFF of the switching element, and a gate resistor change-over switch that operates according to a voltage of a timing capacitor connected to the output side of the voltage detecting switch to increase a resistance value of the resistance circuit.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor switching element;
an overvoltage protection circuit to protect the switching element from overvoltage;
a resistance circuit to transmit a control signal for turning the switching element ON and OFF to a control terminal of the switching element;
a first switching means for receiving, through the overvoltage protection circuit, a signal corresponding to a voltage appearing at an output terminal of the switching element on turning OFF of the switching element;
a second switching means for operating according to a voltage of a first capacitor connected to an output side of the first switching means to increase a resistance value of the resistance circuit; and
a timing control means for controlling timing of operating the second switching means in accordance with the voltage of the first capacitor, the first capacitor being charged or discharged responsive to a level of the control signal,
wherein the timing control means turns off the second switching means by discharging the first capacitor with the control signal before the elapse of an ON time of the control signal causes an excessive current to flow in the switching element, and slows a turn-off speed of the switching element by increasing the resistance value.

2. The semiconductor device according to claim 1 , further comprising a delaying means for delaying information given by the overvoltage protection circuit and transmitting the information to the first switching means.

3. The semiconductor device according to claim 2 , wherein the delaying means comprises a second capacitor that is connected between the overvoltage protection circuit and the first switching means and delays variation of input voltage to the first switching means.

4. The semiconductor device according to claim 2 , wherein the second switching means operates to change a connecting condition of a plurality of resistors and to increase the resistance value of the resistance circuit.

5. The semiconductor device according to claim 2 , wherein the second switching means operates to change a connecting condition of a plurality of resistors and to increase the resistance value of the resistance circuit.

6. The semiconductor device according to claim 2 , wherein the second switching means comprises at least one semiconductor switching element that operates corresponding to a voltage across the first capacitor.

7. The semiconductor device according to claim 2 , wherein the second switching means comprises at least one semiconductor switching element that operates corresponding to a voltage across the first capacitor.

8. The semiconductor device according to claim 1 , wherein the second switching means operates to change a connecting condition of a plurality of resistors and to increase the resistance value of the resistance circuit.

9. The semiconductor device according to claim 1 , wherein the first switching means comprises a semiconductor switching element that operates corresponding to a divided voltage value of a voltage dividing resistor connected to the overvoltage protection circuit.

10. The semiconductor device according to claim 1 , wherein the second switching means comprises at least one semiconductor switching element that operates corresponding to a voltage across the first capacitor.

11. An apparatus, comprising:
a switching element;
a resistance device coupled to the switching element; and
a control device configured to increase a resistance value of the resistance device based on a switching state of the switching element;
wherein the control device includes:
a first switching device coupled to a change signal, the change signal being transmitted in response to a change in the switching state of the switching element;
a second switching device coupled to the first switching device, and configured to, in response to information transmitted from the first switching device, change in switching state to cause the resistance value to increase; and
a timing device directly connected to a node common to the first switching device and the second switching device, and configured to at least partly determine a timing of switching of the second switching device.

12. The apparatus of claim 11 , further comprising a delay device configured to delay the information transmitted from the first switching device.

13. The apparatus of claim 12 , wherein the delay device is configured to delay a signal corresponding to a voltage at a terminal of the switching element, to control a change in state of the first switching device.

14. The apparatus of claim 13 , wherein the resistance device comprises a first resistor and a second resistor, coupled in parallel between the switching element and a control signal that controls the switching state of the switching element.

15. The apparatus of claim 14 , wherein the second switching device is coupled to the second resistor, and configured to, in response to the information transmitted from the first switching device, change in state to decouple the second resistor from the first resistor.

Assignees

• Fuji Electric Co Ltd

Inventors

• Takeuchi Toru

Classifications

• Y10T307/826

  Cross-Sectional Technologies · mapped topic

• H03K17/0828 Primary

  in composite switches · CPC title

• H02H3/20 Primary

  responsive to excess voltage · CPC title

• H01H47/00

  Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current · CPC title

• H03K17/166

  Soft switching · CPC title