Method of manufacturing high resistivity soi wafers with charge trapping layers based on terminated si deposition
US-2015115480-A1 · Apr 30, 2015 · US
US9257630B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9257630-B2 |
| Application number | US-201314072733-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 5, 2013 |
| Priority date | Jul 16, 2013 |
| Publication date | Feb 9, 2016 |
| Grant date | Feb 9, 2016 |
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The present invention relates to a piezoelectric device. A piezoelectric device in accordance with an embodiment of the present invention includes a piezoelectric member and a connection member which are coupled to each other, wherein the piezoelectric member includes a polycrystalline member made of a polycrystalline piezoelectric material, a single crystal member made of a single crystal piezoelectric material and coupled to the connection member, and a textured member provided between the polycrystalline member and the single crystal member and having intermediate properties of the polycrystalline piezoelectric material and the single crystal piezoelectric material.
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What is claimed is: 1. A piezoelectric device comprising: a piezoelectric member; and a connection member coupled to the piezoelectric member, wherein the piezoelectric member comprises: a polycrystalline member made of a polycrystalline piezoelectric material; a single crystal member made of a single crystal piezoelectric material and coupled to the connection member; and a textured member provided between the polycrystalline member and the single crystal member and havin…
Mechanical Engineering · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Mechanical Engineering · mapped topic
Electricity · mapped topic
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