Photoelectric element, display unit and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9257590-B2
Application number	US-97254810-A
Country	US
Kind code	B2
Filing date	Dec 20, 2010
Priority date	Dec 20, 2010
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A photoelectric element including a transparent bottom electrode, a photosensitive layer, a first electrode, a second electrode and a transparent top electrode is provided. The photosensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the photosensitive layer. The transparent top electrode is located above the photosensitive layer.

First claim

What is claimed is:

1. A dual side photo-sensing touch display panel, comprising:
a substrate;
a plurality of scan lines disposed on the substrate;
a plurality of data lines disposed on the substrate and intersected to the scan lines, and the scan lines and the data lines defining a plurality of pixel regions on the substrate;
a plurality of pixels disposed in the pixel regions, each of the pixels being electrically connected to the corresponding scan line and the corresponding data line, respectively, and each of the pixels comprising at least a thin film transistor and a pixel electrode, the thin film transistor comprising a channel layer, a first bottom electrode, a first electrode and a second electrode, wherein the first bottom electrode is located below the channel layer, and the pixel electrode is electrically connected to the second electrode;
a top electrode located above the pixel electrode; and
a plurality of dual side photo-sensing photoelectric elements arranged in an array and disposed on the substrate, and each of the dual side photo-sensing photoelectric elements comprising a photosensitive layer, a second bottom electrode, a third electrode and a fourth electrode, wherein the second bottom electrode is located below the photosensitive layer, the top electrode extends to the top of the photosensitive layer, the top electrode is a transparent top electrode, and each of the second bottom electrodes is a transparent bottom electrode.

2. The dual side photo-sensing touch display panel as claimed in claim 1 , further comprising a plurality of top side photo-sensing photoelectric elements arranged in an array and disposed on the substrate.

3. The dual side photo-sensing touch display panel as claimed in claim 2 , further comprising a plurality of bottom side photo-sensing photoelectric elements arranged in an array and disposed on the substrate.

4. The dual side photo-sensing touch display panel as claimed in claim 1 , further comprising a plurality of bottom side photo-sensing photoelectric elements arranged in an array and disposed on the substrate.

5. A dual side photo-sensing touch display panel, comprising:
a substrate;
a plurality of scan lines disposed on the substrate;
a plurality of data lines disposed on the substrate and intersected to the scan lines, and the scan lines and the data lines defining a plurality of pixel regions on the substrate;
a plurality of pixels disposed in the pixel regions, each of the pixels being electrically connected to the corresponding scan line and the corresponding data line, respectively, and each of the pixels comprising at least a thin film transistor and a pixel electrode, the thin film transistor comprising a channel layer, a first bottom electrode, a first electrode and a second electrode, wherein the first bottom electrode is located below the channel layer, and the pixel electrode is electrically connected to the second electrode;
a top electrode located above the pixel electrode;
a plurality of top side photo-sensing photoelectric elements arranged in an array and disposed on the substrate, and each of the top side photo-sensing photoelectric elements comprising a first photosensitive layer, a second bottom electrode, a third electrode and a fourth electrode, wherein the second bottom electrode is located below the first photosensitive layer, the top electrode extends to the top of the first photosensitive layer; and
a plurality of bottom side photo-sensing photoelectric elements arranged in an array and disposed on the substrate, each of the bottom side photo-sensing photoelectric elements comprising a second photosensitive layer, a third bottom electrode, a fifth electrode, a sixth electrode and a opaque top electrode located above the second photosensitive layer, wherein the opaque top electrode is located between the fifth electrode and the sixth electrode, the third bottom electrode is located below the second photosensitive layer, the top electrode extends to the top of the second photosensitive layer, the top electrode is a transparent top electrode, each of the second bottom electrodes is a opaque bottom electrode, and each of the third bottom electrodes is a transparent bottom electrode.

Assignees

• Chan Isaac Wing-Tak
• Ind Tech Res Inst

Inventors

• Chan Isaac Wing-Tak

Classifications

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10F55/00

  Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto · CPC title

• H10D86/40 Primary

  characterised by multiple TFTs · CPC title

• H01L31/12 Primary

  Electricity · mapped topic

• H01L27/1214

  Electricity · mapped topic