Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9257567-B2
Application number	US-201514827809-A
Country	US
Kind code	B2
Filing date	Aug 17, 2015
Priority date	Mar 8, 2010
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor; and
a sixth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the first photoelectric conversion element,
wherein one of a source and a drain of the second transistor is electrically connected to the second photoelectric conversion element,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the fourth transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a source and a drain of the fifth transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to a source and a drain of the sixth transistor,
wherein a gate of the first transistor is electrically connected to a first wiring,
wherein a gate of the second transistor is electrically connected to the first wiring,
wherein a gate of the fifth transistor is electrically connected to a second wiring,
wherein a gate of the sixth transistor is electrically connected to a third wiring,
wherein the first transistor comprises an oxide semiconductor, and
wherein the second transistor comprises an oxide semiconductor.

2. The semiconductor device according to claim 1 ,
wherein the third transistor comprises an oxide semiconductor, and
wherein the fourth transistor comprises an oxide semiconductor.

3. The semiconductor device according to claim 1 ,
wherein each of the first photoelectric conversion element and the second photoelectric conversion element is a photodiode.

4. The semiconductor device according to claim 3 , wherein the photodiode is a pin photodiode.

5. The semiconductor device according to claim 3 , wherein the photodiode comprises an amorphous silicon.

6. A display device comprising:
the semiconductor device according to claim 1 ; and
a display element.

7. An electronic device comprising the semiconductor device according to claim 1 .

8. A semiconductor device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor; and
an eighth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the first photoelectric conversion element,
wherein one of a source and a drain of the second transistor is electrically connected to the second photoelectric conversion element,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the fourth transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a source and a drain of the fifth transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to a source and a drain of the sixth transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to the gate of the third transistor,
wherein one of a source and a drain of the eighth transistor is electrically connected to the gate of the fourth transistor,
wherein a gate of the first transistor is electrically connected to a first wiring,
wherein a gate of the second transistor is electrically connected to the first wiring,
wherein a gate of the fifth transistor is electrically connected to a second wiring,
wherein a gate of the sixth transistor is electrically connected to a third wiring,
wherein a gate of the seventh transistor is electrically connected to a fourth wiring,
wherein a gate of the eighth transistor is electrically connected to the fourth wiring,
wherein the first transistor comprises an oxide semiconductor, and
wherein the second transistor comprises an oxide semiconductor.

9. The semiconductor device according to claim 8 ,
wherein the seventh transistor comprises an oxide semiconductor, and
wherein the eighth transistor comprises an oxide semiconductor.

10. The semiconductor device according to claim 8 ,
wherein the third transistor comprises an oxide semiconductor, and
wherein the fourth transistor comprises an oxide semiconductor.

11. The semiconductor device according to claim 8 , wherein each of the first photoelectric conversion element and the second photoelectric conversion element is a photodiode.

12. The semiconductor device according to claim 11 , wherein the photodiode is a pin photodiode.

13. The semiconductor device according to claim 11 , wherein the photodiode comprises an amorphous silicon.

14. A display device comprising:
the semiconductor device according to claim 8 ; and
a display element.

15. An electronic device comprising the semiconductor device according to claim 8 .

16. A semiconductor device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor; and
a sixth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the first photoelectric conversion element,
wherein one of a source and a drain of the second transistor is electrically connected to the second photoelectric conversion element,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the fourth transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a source and a drain of the fifth transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to a source and a drain of the sixth transistor,
wherein in a first period, the first transistor and the second transistor are on,
wherein in the first period, the fifth transistor and the sixth transistor are off,
wherein in a second period, the fifth transistor is on,
wherein in the second period, the first transistor, the second transistor, and the sixth transistor are off,
wherein in a third period, the sixth transistor is on,
wherein in the third period, the first transistor, the second transistor, and the fifth transistor are off,
wherein the first transistor comprises an oxide semiconductor, and
wherein the second transistor comprises an oxide semiconductor.

17. The semiconductor device according to claim 16 ,
wherein the third transistor comprises an oxide semiconductor, and
wherein the fourth transistor comprises an oxide semiconductor.

18. The semiconductor device according to claim 16 , wherein each of the first photoelectric conversion element and the second photoelectric conversion element is a photodiode.

19. The semiconductor device according to claim 18 , wherein the photodiode is a pin photodiode.

20. The semiconductor device according to claim 18 , wherein

Assignees

• Semiconductor Energy Lab

Inventors

• Kurokawa Yoshiyuki
• Ikeda Takayuki
• Tamura Hikaru
• Kozuma Munehiro
• Ikeda Masataka
• Aoki Takeshi

Classifications

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H10F39/811

  Interconnections · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F39/802 Primary

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title