Magnetic field effect transistor

Patent metadata

Field	Value
Publication number	US-9257540-B2
Application number	US-201214369188-A
Country	US
Kind code	B2
Filing date	Dec 7, 2012
Priority date	Dec 28, 2011
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A magnetic field effect transistor is presented. A magnetic field effect transistor comprises a current control part and a magnetic field applying part. A current control part comprises multiple electrodes and a current flowing material region located between multiple electrodes and in which the amount of current flowing between the electrodes is changed, and a magnetic field applying part applying a magnetic field generating from a magnetization state, which changes according to external input, of a pre-set material. By controlling current by using magnetic fields, high speed operation is possible as charging time is not required, and calculation results may be stored without external power supply because magnetic field is supplied by altering magnetization state of a material according to external input.

First claim

The invention claimed is:

1. A magnetic field effect transistor comprising,
a current control part comprising a pair of electrodes, and a current flowing material region located between the pair of electrodes and in which amount of current flowing between the pair of electrodes is changed in accordance with externally applied magnetic fields; and
a magnetic field applying part formed on the current flowing material region, and applying a magnetic field generated from a magnetization state of a perpendicular magnetic anisotropy material changing in accordance with external input, to the current flowing material region,
wherein one of the pair of electrodes is a source region and the other of the pair of electrodes is drain region of the magnetic field effect transistor, the current flowing material region is a channel region of the magnetic field effect transistor, and the magnetic field applying part is a gate region of the magnetic field effect transistor.

2. A magnetic field effect transistor according to claim 1 , wherein the magnetic field applying part comprises a non-magnetization layer located between ferromagnetic layers.

3. A magnetic field effect transistor according to claim 2 , wherein the ferromagnetic layers are composed of a perpendicular magnetic anisotropy material.

4. A magnetic field effect transistor according to claim 3 , wherein the external input is a current applied input between the ferromagnetic materials.

5. A magnetic field effect transistor according to claim 4 , wherein the current applied input is applied between the magnetic field applying part and the electrode used as a drain region.

6. A magnetic field effect transistor according to claim 5 , wherein an insulating layer is further comprised between the current flowing material region and the magnetic field applying part.

Assignees

• Univ Korea Res & Bus Found

Inventors

• Rhie Kungwon
• Hong Jin Ki
• Kim Tae-Yueb
• Joo Sung-Jung
• Lee Jin-Seo
• Jung Ku-Youl
• Kim Dong-Seok
• Han Sun-Il

Classifications

• H10D48/40 Primary

  Devices controlled by magnetic fields · CPC title

• H10D30/701

  IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs · CPC title

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title

• H10D48/385 Primary

  Devices using spin-polarised carriers · CPC title

• H01L29/784

  Electricity · mapped topic