Image sensor
US-12094907-B2 · Sep 17, 2024 · US
US9257465B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9257465-B2 |
| Application number | US-201213679492-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2012 |
| Priority date | Dec 7, 2011 |
| Publication date | Feb 9, 2016 |
| Grant date | Feb 9, 2016 |
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A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of the pixels, amplifies the generated charge in the photoelectric conversion portion, and outputs a level of signal corresponding to the charge, wherein the a predetermined number of the pixels which share the amplifying portion are arranged in a first direction extending along a signal line via which the amplifying portion outputs the signal, and wherein a length of an area where the amplifying portion is formed along a second direction substantially intersecting the first direction is set to be equal to or more than a length of one pixel and to be less than a length of two pixels in the second direction.
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device comprising: a plurality of pixels, each of the plurality of pixels having a photoelectric conversion portion that is configured to sense light and convert the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of pixels of the plurality of pixels, that is configured to amplify the generated charge in the photoelectric conversion portion, and output a level of signal corresponding to…
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