Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Glass-ceramic-based semiconductor-on-insulator structures and method for making the same
US9257328B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9257328-B2 |
| Application number | US-32457608-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 26, 2008 |
| Priority date | Nov 26, 2008 |
| Publication date | Feb 9, 2016 |
| Grant date | Feb 9, 2016 |
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Abstract
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Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.
First claim
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The invention claimed is: 1. A semiconductor on glass-ceramic structure comprising: a semiconductor material component comprising a substantially single-crystal semiconductor material layer and an oxide layer of the single-crystal semiconductor material; an oxide glass material layer; and a glass-ceramic layer, wherein warpage of the semiconductor on glass-ceramic structure is no more than about 200 microns. 2. The semiconductor on glass-ceramic structu…
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Classifications
Electricity · mapped topic
- H10P90/1916Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L21/76254Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9257328B2 cover?
- Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer fro…
- Who is the assignee on this patent?
- Daigler Christopher Paul, Gadkaree Kishor Purushottam, Mach Joseph Frank, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P90/1916. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).