Magnetic tunnel junctions

Patent metadata

Field	Value
Publication number	US-9257136-B1
Application number	US-201514704023-A
Country	US
Kind code	B1
Filing date	May 5, 2015
Priority date	May 5, 2015
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first crystalline magnetic region, in one embodiment comprising Co and Fe. In one embodiment, the first electrode comprises a second amorphous region comprising amorphous XN, where X is one or more of W, Mo, Cr, V, Nb, Ta, Al, and Ti. In one embodiment, the first electrode comprises a second region comprising Co, Fe, and N.

First claim

The invention claimed is:

1. A magnetic tunnel junction comprising:
a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic tunnel insulator material between the first and second electrodes; and
the magnetic recording material of the first electrode comprising a first crystalline magnetic region comprising Co and Fe and the first electrode comprising a second amorphous region comprising amorphous XN, where X is one or more of W, Mo, Cr, V, Nb, Ta, Al, and Ti.

2. The magnetic tunnel junction of claim 1 wherein the Co and Fe of the first crystalline magnetic region are directly against the amorphous XN of the second amorphous region.

3. The magnetic tunnel junction of claim 1 wherein the first crystalline magnetic region comprises B.

4. The magnetic tunnel junction of claim 1 wherein the first crystalline magnetic region is devoid of B.

5. The magnetic tunnel junction of claim 1 wherein the amorphous XN is stoichiometric.

6. The magnetic tunnel junction of claim 1 wherein the amorphous XN is non-stoichiometrically N-rich.

7. The magnetic tunnel junction of claim 1 wherein the second amorphous region consists essentially of the amorphous XN.

8. The magnetic tunnel junction of claim 1 wherein the second amorphous region comprising amorphous XN has a maximum thickness no greater than about 10 Angstroms.

9. The magnetic tunnel junction of claim 1 wherein the second amorphous region comprising amorphous XN has a maximum thickness no greater than about 50 Angstroms.

10. The magnetic tunnel junction of claim 9 wherein the second amorphous region comprising amorphous XN has a minimum thickness no less than about 20 Angstroms.

11. The magnetic tunnel junction of claim 1 wherein the first electrode comprises a non-magnetic MgO-comprising region spaced from the non-magnetic tunnel insulator material.

12. The magnetic tunnel junction of claim 11 wherein MgO of the MgO-comprising region is directly against the amorphous XN of the second amorphous region.

13. The magnetic tunnel junction of claim 11 wherein the first electrode comprises a third crystalline region comprising Co and Fe.

14. The magnetic tunnel junction of claim 13 wherein the third crystalline region comprises B.

15. The magnetic tunnel junction of claim 13 wherein the third crystalline region is devoid of B.

16. The magnetic tunnel junction of claim 13 wherein the Co and Fe of the third crystalline region are directly against MgO of the MgO-comprising region.

17. The magnetic tunnel junction of claim 1 wherein the first electrode comprises a non-magnetic metal region, the amorphous XN of the second amorphous region being directly against metal of the non-magnetic metal region.

18. The magnetic tunnel junction of claim 17 wherein the amorphous XN of the second amorphous region is directly against the Co and Fe of the first crystalline magnetic region.

19. The magnetic tunnel junction of claim 1 wherein X comprises more than one of W, Mo, Cr, V, Nb, Ta, Al, and Ti.

20. The magnetic tunnel junction of claim 1 wherein X is one or more of W, Mo, Cr, V, Nb, Ta, and Al.

21. The magnetic tunnel junction of claim 1 wherein the first electrode comprises a third crystalline region comprising Co and Fe that is spaced from the first crystalline magnetic region comprising Co and Fe.

22. The magnetic tunnel junction of claim 21 wherein the amorphous XN is between the first crystalline magnetic region and the third crystalline region.

23. The magnetic tunnel junction of claim 1 wherein,
the first electrode comprises a non-magnetic metal region in addition to said amorphous XN; and
the first electrode comprises a third crystalline region comprising Co and Fe that is spaced from the first crystalline magnetic region comprising Co and Fe.

24. A magnetic tunnel junction comprising:
a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic tunnel insulator material between the first and second electrodes; and
the magnetic recording material of the first electrode comprising a first crystalline magnetic region comprising Co, Fe, and B, and the first electrode comprising a second amorphous region comprising amorphous XN, where X is one or more of W, Mo, Cr, V, Nb, Ta, Al, and Ti; the Co, Fe, and B of the magnetic recording material being directly against the amorphous XN of the second amorphous region.

25. The magnetic tunnel junction of claim 24 wherein the non-magnetic tunnel insulator comprises MgO; the Co, Fe, and B of the first crystalline magnetic region being directly against MgO of the non-magnetic tunnel insulator material.

26. A magnetic tunnel junction comprising:
a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic tunnel insulator material between the first and second electrodes; and
the magnetic recording material of the first electrode comprising a first crystalline magnetic region and the first electrode comprising a second region comprising Co, Fe, and N.

27. The magnetic tunnel junction of claim 26 wherein the second region consists essentially of the Co, Fe, and N.

28. The magnetic tunnel junction of claim 26 wherein the first crystalline magnetic region comprises Co and Fe.

29. The magnetic tunnel junction of claim 28 wherein the Co and Fe of the first crystalline magnetic region are directly against the Co, Fe, and N of the second region.

30. The magnetic tunnel junction of claim 28 wherein the first crystalline magnetic region comprises B.

31. The magnetic tunnel junction of claim 28 wherein the first crystalline magnetic region is devoid of B.

32. The magnetic tunnel junction of claim 28 wherein the first electrode comprises a non-magnetic MgO-comprising region spaced from the non-magnetic tunnel insulator material.

33. The magnetic tunnel junction of claim 32 comprising an amorphous metal region between the non-magnetic MgO-comprising region and the second region comprising Co, Fe, and N.

34. The magnetic tunnel junction of claim 32 wherein MgO of the MgO-comprising region is not directly against the Co, Fe, and N of the second region comprising Co, Fe, and N.

35. The magnetic tunnel junction of claim 32 wherein the first electrode comprises a third crystalline region comprising Co and Fe.

36. The magnetic tunnel junction of claim 35 wherein the third crystalline region comprises B.

37. The magnetic tunnel junction of claim 35 wherein the third crystalline region is devoid of B.

38. The magnetic tunnel junction of claim 35 wherein the Co and Fe of the third crystalline region are directly against MgO of the MgO-comprising region.

39. The magnetic tunnel junction of claim 26 wherein the first electrode comprises an amorphous metal region, the Co, Fe, and N of the second region being direct

Assignees

• Micron Technology Inc

Inventors

• Siddik Manzar

Classifications

• G11B5/127 Primary

  Structure or manufacture of heads, e.g. inductive · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10N50/85 Primary

  Materials of the active region · CPC title