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Silicon carbide substrate and method of manufacturing the same
US9255344B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9255344-B2 |
| Application number | US-201213605265-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2012 |
| Priority date | Sep 21, 2011 |
| Publication date | Feb 9, 2016 |
| Grant date | Feb 9, 2016 |
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Abstract
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A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dislocation density of not more than 1×10 4 cm −2 , a basal plane dislocation density of not more than 1×10 4 cm −2 , a stacking fault density of not more than 0.1 cm −1 , a conductive impurity concentration of not less than 1×10 18 cm −3 , a residual impurity concentration of not more than 1×10 16 cm −3 , and a secondary phase inclusion density of not more than 1 cm −3 .
First claim
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What is claimed is: 1. A silicon carbide substrate made of a single crystal of silicon carbide, and having a width of not less than 100 mm, a micropipe density of not more than 7 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dislocation density of not more than 1×10 4 cm −2 , a basal plane dislocation density of not more than 1×10 4 cm −2 , a stacking fault density of not more than 0.1 cm −1 , a conductive impurity concentration of not less than 1×10 18 cm −3 , a residual impurity concentration of not more than 1×10 16 cm −3 , and a secondary phase inclusion density of not more than 1 cm −3 . 2. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 1 , wherein said micropipe density is not more than 5 cm −2 . 3. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 1 , wherein said width is not less than 120 mm. 4. A silicon carbide substrate made of a single crystal of silicon carbide, and having a width of not less than 150 mm, a micropipe density of not more than 7 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dislocation density of not more than 1×10 4 cm −2 , a basal plane dislocation density of not more than 1×10 4 cm −2 , a stacking fault density of not more than 0.1 cm −1 , a conductive impurity concentration of not less than 1×10 18 cm −3 , a residual impurity concentration of not more than 1×10 16 cm −3 , and a secondary phase inclusion density of not more than 1 cm −3 . 5. A silicon carbide substrate made of a single crystal of silicon carbide, and having a width of not less than 100 mm, a micropipe density of not more than 3 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dislocation density of not more than 1×10 4 cm −2 , a basal plane dislocation density of not more than 1×10 4 cm −2 , a stacking fault density of not more than 0.1 cm −1 , a conductive impurity concentration of not less than 1×10 18 cm −3 , a residual impurity concentration of not more than 1×10 16 cm −3 , and a secondary phase inclusion density of not more than 1 cm −3 . 6. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 5 , wherein said stacking fault density is not more than 0.03 cm −1 . 7. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 5 , wherein said conductive impurity concentration is not less than 5×10 18 cm −3 . 8. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 5 , wherein said stacking fault density is not more than 0.03 cm −1 , and said conductive impurity concentration is not less than 5×10 18 cm −3 . 9. A silicon carbide substrate made of a single crystal of silicon carbide, and having a width of not less than 150 mm, a micropipe density of not more than 5 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dislocation density of not more than 1×10 4 cm −2 , a basal plane dislocation density of not more than 1×10 4 cm −2 , a stacking fault density of not more than 0.1 cm −1 , a conductive impurity concentration of not less than 1×10 18 cm −3 , a residual impurity concentration of not more than 1×10 16 cm −3 , and a secondary phase inclusion density of not more than 1 cm −3 . 10. A silicon carbide substrate made of a single crystal of silicon carbide, and having a width of not less than 150 mm, a micropipe density of not more than 3 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dislocation density of not more than 1×10 4 cm −2 , a basal plane dislocation density of not more than 1×10 4 cm −2 , a stacking fault density of not more than 0.1 cm −1 , a conductive impurity concentration of not less than 1×10 18 cm −3 , a residual impurity concentration of not more than 1×10 16 cm −3 , and a secondary phase inclusion density of not more than 1 cm −3 . 11. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 10 , wherein said stacking fault density is not more than 0.03 cm −1 . 12. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 10 , wherein said conductive impurity concentration is not less than 5×10 18 cm −3 . 13. The silicon carbide substrate made of a single crystal of silicon carbide according to claim 10 , wherein said stacking fault density is not more than 0.03 cm −1 , and said conductive impurity concentration is not less than 5×10 18 cm −3 .
Assignees
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Classifications
Silicon carbide · CPC title
Crystal orientations · CPC title
Silicon carbide · CPC title
using physical deposition, e.g. vacuum deposition or sputtering · CPC title
- C30B29/36Primary
Carbides · CPC title
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- What does patent US9255344B2 cover?
- A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dis…
- Who is the assignee on this patent?
- Harada Shin, Fujiwara Shinsuke, Nishiguchi Taro, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).