Modulated ion-induced atomic layer deposition (MII-ALD)

Patent metadata

Field	Value
Publication number	US-9255329-B2
Application number	US-51092209-A
Country	US
Kind code	B2
Filing date	Jul 28, 2009
Priority date	Dec 6, 2000
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

The present invention relates to a cyclic deposition process suitable for depositing an elemental film. The process employs an enhanced atomic layer deposition technique.

First claim

What is claimed is:

1. A method for depositing an elemental film onto a substrate in a chamber comprising:
introducing a reactant gas into the chamber, the reactant gas forming a layer of adsorbed reactant on the substrate;
introducing at least one ion generating feed gas into the chamber;

generating a plasma from the ion generating feed gas to form ions, wherein during generation of the plasma, a position of the substrate and a position of the plasma do not change relative to one another;
exposing the substrate to the ions;
varying a bias applied to the substrate to modulate the ions between a low energy state and a high energy state, wherein ions at the low energy state have insufficient energy to induce surface deposition reactions with the layer of adsorbed reactant and wherein ions at the high energy state have sufficient energy to induce surface deposition reactions with the layer of adsorbed reactant, wherein the bias applied to the substrate is varied to cause the depositing, while the plasma is generated continuously and the substrate is continuously exposed to the ions; and
reacting the layer of adsorbed reactant with the ions at the high energy state to form the elemental film.

2. The method of claim 1 , wherein adsorption of the reactant gas on the substrate occurs via chemisorption.

3. The method of claim 1 , wherein the method is repeated until the film achieves a desired thickness.

4. The method of claim 1 , wherein the reacting step occurs in a reducing environment.

5. The method of claim 1 , further comprising removing the reactant gas by evacuating or purging the chamber.

6. The method of claim 1 , wherein the ion generating feed gas is selected from a group consisting of argon, krypton, neon, helium, and xenon.

7. The method of claim 1 , wherein the generated ions are selected from a group consisting of Ar + , Kr + , Ne + , He + , and Xe + .

8. The method of claim 1 , further including maintaining the substrate at a temperature of between about 25° C. and 400° C., wherein the temperature is sufficiently low such that the layer of adsorbed reactant does not react with the ions at the low energy state.

9. The method of claim 1 , wherein the layer of adsorbed reactant is reduced to its elemental state by an ion-induced surface reaction.

10. The method of claim 1 , wherein the reactant gas is exposed to the substrate continuously.

11. The method of claim 1 , wherein the bias applied to the substrate is varied within a range between −20V and −1000V.

12. The method of claim 1 , wherein varying the bias applied to the substrate comprises varying at least one of a bias frequency, magnitude and duty-cycle.

13. The method of claim 1 , wherein the bias applied to the substrate is varied within a range between −50V and −350V.

14. The method of claim 1 , wherein the plasma is generated at a constant plasma power.

15. The method of claim 1 , wherein the chamber comprises a showerhead, and wherein the plasma is generated between the showerhead and the substrate.

16. The method of claim 1 , wherein the chamber comprises a main processing chamber, a plasma source chamber, and a showerhead separating the main processing chamber from the plasma source chamber, wherein the substrate is positioned in the main processing chamber, and wherein the plasma is generated in the plasma source chamber such that the plasma is not in direct communication with the substrate.

17. The method of claim 1 , wherein the bias applied to the substrate is varied by varying a bias applied by a power supply to a pedestal that supports the substrate, the pedestal being coupled to the substrate, and wherein a position of the substrate and a position of the plasma do not change relative to one another after the plasma is generated.

18. A method for depositing an elemental film onto a substrate in a chamber comprising:
introducing a reactant gas into the chamber, the reactant gas forming a layer of adsorbed reactant on the substrate;
introducing at least one ion generating feed gas into the chamber;
introducing at least one radical generating feed gas into the chamber;
generating a plasma from the ion generating feed gas and a plasma from the radical generating feed gas to form ions and radicals, wherein during generation of the plasma from the ion generating feed gas and the plasma from the ion generating feed gas, a position of the substrate does not change relative to a position of the plasma from the ion generating feed gas or relative to a position of the plasma from the radical generating feed gas;
exposing the substrate to the ions and radicals;
varying a bias applied to the substrate to modulate the ions between a low energy state and a high energy state, wherein ions at the low energy state have insufficient energy to induce surface deposition reactions with the layer of adsorbed reactant and wherein ions at the high energy state have sufficient energy to induce surface deposition reactions with the layer of adsorbed reactant, wherein the bias applied to the substrate is varied to cause the depositing, while the plasma is generated continuously and the substrate is continuously exposed to the ions; and
reacting the layer of adsorbed reactant with the ions at the high energy state and with radicals to form the elemental film, wherein the radicals are not incorporated into the film.

19. The method of claim 18 , wherein the substrate is simultaneously exposed to the ions and the radicals.

20. The method of claim 18 , wherein the bias is applied to the substrate by applying a bias to a pedestal coupled to the substrate, and wherein the substrate is biased to a negative potential relative to ground.

21. The method of claim 18 , wherein the radical generating feed gas is selected from the group consisting of H 2 , N 2 , and NH 3 vapor.

22. The method of claim 18 , wherein the generated radicals are selected from a group consisting of hydrogen atoms, nitrogen atoms and NH molecules.

23. The method of claim 18 , wherein the method is repeated until the film achieves a desired thickness.

24. The method of claim 18 , further comprising removing the reactant gas by evacuating or purging the chamber.

25. The method of claim 18 , wherein the adsorbed reactant is reduced to its elemental state by an ion-induced surface reaction.

26. The method of claim 18 , wherein a single plasma is generated from the ion generating feed gas and from the radical generating feed gas to form ions and radicals.

27. A method for forming an elemental film on a substrate comprising:
introducing a reactant gas into a chamber, the reactant gas forming a layer of adsorbed reactant on the substrate;
introducing at least one ion generating feed gas into the chamber;
generating a plasma from the ion generating feed gas to form ions, wherein during generation of the plasma, a position of the substrate and a position of the plasma do not change relative to one another;
exposing the substrate to the ions;
varying a bias applied to the substrate to modulate the ions between a low energy state and a high energy state, wherein ions at the low energy state have insufficient energy to induce surface deposition reactions with the layer of adsorbed reactant, and wherein ions at the high energy state have sufficient energy to induce surface deposition reactions with the layer of adsorbed reactant, wherein the bias applied to the subst

Assignees

• Chiang Tony P
• Leeser Karl
• Novellus Systems Inc

Inventors

• Chiang Tony P
• Leeser Karl

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• C23C16/463

  Cooling of the substrate · CPC title

• C23C16/45534

  Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title

• C23C16/22

  characterised by the deposition of inorganic material, other than metallic material · CPC title