Copper alloy wire, copper alloy stranded wire, covered electric wire, and terminal-fitted electric wire
US-2015371726-A1 · Dec 24, 2015 · US
Copper alloy conductor, and trolley wire and cable using same, and copper alloy conductor fabrication method
US9255311B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9255311-B2 |
| Application number | US-32807206-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 10, 2006 |
| Priority date | Jan 17, 2005 |
| Publication date | Feb 9, 2016 |
| Grant date | Feb 9, 2016 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A copper alloy conductor has a copper alloy material which has a copper parent material with 0.001 to 0.1 wt % (=10 to 1000 wt·ppm) of oxygen and 0.15 to 0.70 wt % (exclusive of 0.15 wt %) of Sn. A crystalline grain to form a crystalline structure of the copper alloy material has an average diameter of 100 μm or less, and 80% or more of an oxide of the Sn is dispersed in a matrix of the crystalline structure as a fine oxide grain with an average diameter of 1 μm or less.
First claim
Opening claim text (preview).
What is claimed is: 1. A Cu—Sn alloy conductor, comprising: a Cu—Sn alloy material consisting of copper, 0.001 to 0.1 wt % of oxygen, 0.15 to 0.70 wt % (exclusive of 0.15 wt %) of Sn, and inevitable impurities, wherein a crystalline grain to form a crystalline structure of the Cu—Sn alloy material has an average diameter of 100 μm or less, and sub-boundaries are formed in the crystalline grain, wherein an oxide of the Sn is crystallized or precipitated in a matrix of the crystalline structure, wherein 80% or more of the oxide of the Sn is dispersed in the matrix of the crystalline structure as a fine oxide grain with an average diameter of 1 um or less, wherein a cross-sectional area of the Cu—Sn alloy conductor is in a range from 110 mm 2 to 170 mm 2 , wherein a tensile strength of the Cu—Sn alloy conductor having the cross-sectional area is 420 MPa or more, and wherein a conductivity of the Cu—Sn alloy conductor having the cross-sectional area is 60% IACS or more. 2. The Cu—Sn alloy conductor according to claim 1 , wherein a conductivity is in a range from 75% IACS to less than 94% IACS. 3. The Cu—Sn alloy conductor according to claim 1 , wherein the copper alloy material comprises 0.3 to 0.6 wt % of the oxide of the Sn. 4. The Cu—Sn alloy conductor according to claim 3 , wherein the 80% or more of the oxide of the Sn is dispersed in the matrix of the crystalline structure as the fine oxide grain with an average diameter of 0.5 μm or less. 5. The Cu—Sn alloy conductor according to claim 4 , wherein the copper parent material comprises 0.035 to 0.1 wt % of oxygen. 6. The Cu—Sn alloy conductor according to claim 1 , wherein the 80% or more of the oxide of the Sn is dispersed in the matrix of the crystalline structure as fine oxide grain with an average diameter of 0.5 μm or less. 7. The Cu—Sn alloy conductor according to claim 1 , wherein the copper parent material comprises 0.035 to 0.1 wt % of oxygen. 8. The Cu—Sn alloy conductor according to claim 1 , wherein the oxide of the Sn is crystallized and fragmented in the matrix of the crystalline structure. 9. A trolley wire, comprising: a Cu—Sn alloy conductor that comprises a Cu—Sn alloy material consisting of copper, 0.001 to 0.1 wt % of oxygen, 0.15 to 0.70 wt % (exclusive of 0.15 wt %) of Sn, and inevitable impurities, wherein a crystalline grain to form a crystalline structure of the Cu—Sn alloy material has an average diameter of 100 μm or less, and sub-boundaries are formed in the crystalline grain, wherein an oxide of the Sn is crystallized or precipitated in a matrix of the crystalline structure, wherein 80% or more of the oxide of the Sn is dispersed in the matrix of the crystalline structure as a fine oxide grain with an average diameter of 1 um or less, wherein a cross-sectional area of the Cu—Sn alloy conductor is in a range from 110 mm 2 to 170 mm 2 , wherein a tensile strength of the Cu—Sn alloy conductor having the cross-sectional area is 420 MPa or more, and wherein a conductivity of the Cu—Sn alloy conductor having the cross-sectional area is 60% IACS or more.
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9255311B2 cover?
- A copper alloy conductor has a copper alloy material which has a copper parent material with 0.001 to 0.1 wt % (=10 to 1000 wt·ppm) of oxygen and 0.15 to 0.70 wt % (exclusive of 0.15 wt %) of Sn. A crystalline grain to form a crystalline structure of the copper alloy material has an average diameter of 100 μm or less, and 80% or more of an oxide of the Sn is dispersed in a matrix of the crystal…
- Who is the assignee on this patent?
- Kuroda Hiromitsu, Kuroki Kazuma, Aoyama Seigi, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C22C9/02. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 09 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).