Thin film transistor of display apparatus
US-2015380567-A1 · Dec 31, 2015 · US
MOSFET and method for manufacturing the same
US9252280B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9252280-B2 |
| Application number | US-201113510461-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 18, 2011 |
| Priority date | Sep 16, 2011 |
| Publication date | Feb 2, 2016 |
| Grant date | Feb 2, 2016 |
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Abstract
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The present disclosure discloses a metal-oxide-semiconductor field-effect transistor (MOSFET) and a method for manufacturing the same. The MOSFET includes: a silicon on insulator (SOI) wafer which comprises a semiconductor substrate, a buried insulating layer, and a semiconductor layer, the buried insulating layer being on the semiconductor substrate, and the semiconductor layer being on the buried insulating layer; a gate stack on the semiconductor layer; a source region and a drain region, which are in the semiconductor layer and on opposite sides of the gate stack; and a channel region, which is in the semiconductor layer and sandwiched by the source region and the drain region, wherein the MOSFET further comprises a back gate, the back gate being located in the semiconductor substrate and having a first doped region in a lower portion of the back gate and a second doped region in an upper portion of the back gate.
First claim
Opening claim text (preview).
We claim: 1. A Metal Oxide Semiconductor Field Effect Transistor (MOSFET), comprising: a Semiconductor on Insulator (SOI) wafer, which comprises a semiconductor substrate, a buried insulating layer, and a semiconductor layer, the buried insulating layer being on the semiconductor substrate, and the semiconductor layer being on the buried insulating layer; a gate stack on the semiconductor layer; a source region and a drain region, which are in the semiconductor layer and on op…
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Classifications
- H10D30/6706Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D30/6734Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9252280B2 cover?
- The present disclosure discloses a metal-oxide-semiconductor field-effect transistor (MOSFET) and a method for manufacturing the same. The MOSFET includes: a silicon on insulator (SOI) wafer which comprises a semiconductor substrate, a buried insulating layer, and a semiconductor layer, the buried insulating layer being on the semiconductor substrate, and the semiconductor layer being on the bu…
- Who is the assignee on this patent?
- Zhu Huilong, Xu Miao, Liang Qingqing, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6706. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 02 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).