Transistor and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9252222-B2
Application number	US-201514800251-A
Country	US
Kind code	B2
Filing date	Jul 15, 2015
Priority date	Jun 14, 2013
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.

First claim

What is claimed is:

1. A method of fabricating a transistor, the method comprising:
providing a substrate including a semiconductor layer;
forming a gate insulating layer and a gate electrode at a position corresponding to a core of the semiconductor layer;
forming an interlayer insulating layer covering the gate electrode and exposing both sides of the semiconductor layer;
forming an electrode layer extending along the substrate and contacting the both sides of the semicond…

Assignees

• Korea Electronics Telecomm

Inventors

• Cho Sung Haeng
• Park Sang-Hee
• Hwang Chi-Sun

Classifications

• H10D30/6731

  Electricity · mapped topic

• H10D30/0314

  Electricity · mapped topic

• H10D30/6729

  Electricity · mapped topic

• H10D86/441

  Electricity · mapped topic

• H10D64/62 Primary

  Electricity · mapped topic