Filterless color image sensor

Patent metadata

Field	Value
Publication number	US-9252181-B2
Application number	US-201213456991-A
Country	US
Kind code	B2
Filing date	Apr 26, 2012
Priority date	Oct 13, 2011
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.

First claim

What is claimed is:

1. A color image sensor, comprising:
a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and
an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell,
wherein the lower electrode is made of at least one metal selected from the group consisting of molybdenum (Mo), gold (Au), silver (Ag), and platinum (Pt).

2. The color image sensor according to claim 1 , wherein the chalcogenide material includes at least one element selected from the group consisting of sulfur (S), selenium (Se) and tellurium (Te).

3. The color image sensor according to claim 1 , wherein the chalcogenide material is a combination of at least one element selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te) and at least one element selected from the group consisting of copper (Cu), zinc (Zn), gallium (Ga), cadmium (Cd), indium (In), and tin (Sn).

4. The color image sensor according to claim 1 , wherein the chalcogenide material is a combination of at least one element selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te) and at least one element selected from the group consisting of silicon (Si), germanium (Ge), phosphorus (P), arsenic (As), and antimony (Sb).

5. The color image sensor according to claim 1 , wherein the chalcogenide material has a band gap of 1.8 eV to 3.1 eV.

6. The color image sensor according to claim 1 , wherein a band bending direction between the upper electrode and the chalcogenide material is identical to a band bending direction between the lower electrode and the chalcogenide material.

7. The color image sensor according to claim 1 ,
wherein the upper electrode is made of at least one material selected from the group consisting of a metal film, a semiconductor, and a transparent conducting oxide.

8. The color image sensor according to claim 1 , wherein the image sensing circuit includes:
a power supply for supplying a variable power to the photo-sensitive cell; and
a plurality of storage elements synchronized to the variable power and storing an electric characteristic value generated at the photo-sensitive cell,
wherein the wavelength or intensity of incident light are measured based on the electric characteristic value respectively stored in the plurality of storage elements.

9. The color image sensor according to claim 8 , wherein the plurality of storage elements are a first capacitor and a second capacitor.

10. The color image sensor according to claim 9 , further comprising:
a first switching element for opening or closing a channel between the photo-sensitive cell and the first capacitor;
a second switching element for opening or closing a channel between the photo-sensitive cell and the second capacitor; and
a multiplexer synchronized with the variable power of the power supply to control a switching time of the first switching element and the second switching element,
wherein the wavelength and intensity of incident light are measured based on the voltage values of the first capacitor and the second capacitor.

11. The color image sensor according to claim 10 , wherein the first switching element and the second switching element are transistors.

12. A color image sensor, comprising:
an image sensor array wherein a plurality of unit elements, each having a photo-sensitive cell including a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode, are arranged;
a column/row decoder for selecting a unit element of the image sensor array;
a power supply for supplying power to the image sensor array; and
a multiplexer for allowing the power supply to apply a variable power,
wherein the lower electrode is made of at least one metal selected from the group consisting of molybdenum (Mo), gold (Au), silver (Ag), and platinum (Pt).

13. The color image sensor according to claim 12 , wherein the unit element includes:
a first storage element and a second storage element for storing the size of an electric characteristic value generated at the photo-sensitive cell;
a first switching element for opening or closing a channel between the photo-sensitive cell and the first storage element; and
a second switching element for opening or closing a channel between the photo-sensitive cell and the second storage element,
wherein the color image sensor measures the wavelength and intensity of incident light based on the voltage values of the first capacitor and the second capacitor.

14. The color image sensor according to claim 13 , wherein the first storage element and the second storage element are capacitors.

15. The color image sensor according to claim 13 , wherein the first switching element and the second switching element are transistors.

16. The color image sensor according to claim 1 , wherein the image sensing circuit comprises a plurality of charge storage elements storing charges generated from the photo-sensitive cell, the charge storage elements being electrically placed between the lower electrode of the photo-sensitive cell and ground.

17. The color image sensor according to claim 16 , wherein the image sensing circuit further comprises a plurality of switching elements for opening or closing channels between the photo-sensitive cell and the charge storage elements, each switching element being electrically placed between the photo-sensitive cell and each charge storage element.

18. The color image sensor according to claim 8 , wherein a first storage element of the plurality of storage elements stores the electric characteristic value generated at the photo-sensitive cell when the power supply provides a first voltage, and
wherein a second storage element of the plurality of storage elements stores the electric characteristic value generated at the photo-sensitive cell when the power supply provides a second voltage.

19. The color image sensor according to claim 10 , wherein the multiplexer turns on the first capacitor and turns off the second capacitor when the power supply provides a first voltage, and
wherein the multiplexer turns on the second capacitor and turns off the first capacitor when the power supply provides a second voltage.

Assignees

• Lee Su Youn
• Cheong Byung Ki
• Jeong Doo Seok
• Korea Inst Sci & Tech

Inventors

• Lee Su Youn
• Cheong Byung Ki
• Jeong Doo Seok

Classifications

• H04N25/00

  Circuitry of solid-state image sensors [SSIS]; Control thereof · CPC title

• H04N23/12 Primary

  with one sensor only · CPC title

• H10F39/12

  Image sensors · CPC title

• H10F39/1825 Primary

  Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title

• H01L27/14647 Primary

  Electricity · mapped topic