Method of fabricating a nitride substrate

Patent metadata

Field	Value
Publication number	US-9252012-B2
Application number	US-201514833732-A
Country	US
Kind code	B2
Filing date	Aug 24, 2015
Priority date	Feb 28, 2013
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

First claim

What is claimed is:

1. A method of fabricating a nitride substrate, comprising:
preparing a growth substrate;
forming a sacrificial layer on the growth substrate, the sacrificial layer comprising:
a nitride horizontal etching layer comprising an indium-based nitride; and
an upper nitride sacrificial layer disposed on the nitride horizontal etching layer;

horizontally etching the nitride horizontal etching layer;
forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer;
forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE); and
separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

2. The method of claim 1 , wherein the forming of the at least etching hole comprises exposing the upper nitride sacrificial layer to an etching gas at a first temperature.

3. The method of claim 2 , wherein the first temperature is in a range of about 900° C. to about 1200° C.

4. The method of claim 2 , wherein the horizontal etching of the nitride horizontal etching layer comprises at least one of recrystallization of the nitride horizontal etching layer and pyrolysis of the nitride horizontal etching layer.

5. The method of claim 2 , wherein the etching gas comprises at least one of chlorine gas and ammonia gas.

6. The method of claim 1 , wherein a horizontal cross-sectional area of the at least one etching hole within the nitride horizontal etching layer is greater than a different cross-sectional area of the at least one etching hole on a surface of the upper nitride sacrificial layer.

7. The method of claim 1 , wherein the forming of the nitride epitaxial layer comprises forming a void on an upper surface of the sacrificial layer.

8. The method of claim 1 , wherein the nitride horizontal etching layer comprises an alternately stacked structure of In x Ga 1-x N layers and Al y In 1-y N layers (0<x<1, 0<y<1).

9. The method of claim 1 , wherein the sacrificial layer is formed by metal organic chemical vapor deposition (MOCVD).

10. The method of claim 1 , wherein the sacrificial layer further comprises a lower nitride sacrificial layer formed under the nitride horizontal etching layer.

11. The method of claim 1 , wherein:
the nitride epitaxial layer is formed at a second temperature, and
the separating of the nitride epitaxial layer from the growth substrate is performed at a third temperature lower than the second temperature.

12. The method of claim 11 , wherein the nitride epitaxial layer is separated from the growth substrate through natural separation of the nitride horizontal etching layer during cooling from the second temperature to the third temperature.

13. The method of claim 11 , wherein the separating of the nitride epitaxial layer from the growth substrate further comprises applying stress to the nitride horizontal etching layer.

14. The method of claim 1 , further comprising removing the upper nitride sacrificial layer and the nitride horizontal etching layer from the separated nitride epitaxial layer.

15. The method of claim 1 , further comprising:
forming a first mask pattern comprising a first opening portion and a first masking portion on the upper nitride sacrificial layer before the forming of the nitride epitaxial layer; and
forming a first nitride layer on the upper nitride sacrificial layer to cover the first mask pattern before forming the nitride epitaxial layer.

16. The method of claim 15 , wherein the forming the first nitride layer comprises forming at least one void on a surface of the sacrificial layer between the first nitride layer and the sacrificial layer.

17. The method of claim 15 , wherein the first opening portion of the first mask pattern has a width in a range of about 2 μm to about 20 μm.

18. The method of claim 15 , further comprising:
forming a second mask pattern comprising a second opening portion and a second masking portion on the first nitride layer before forming the nitride epitaxial layer; and
forming a second nitride layer on the first nitride layer to cover the second mask pattern,
wherein the second masking portion of the second mask pattern is formed on the first opening portion of the first mask pattern.

19. The method of claim 15 , wherein forming the first nitride layer comprises further horizontally etching the nitride horizontal etching layer.

20. The method of claim 1 , further comprising:
forming a buffer layer on the growth substrate before forming the sacrificial layer.

21. The method of claim 1 , wherein the growth substrate comprises a sapphire substrate.

22. The method of claim 1 , wherein the nitride epitaxial layer separated from the growth substrate comprises a gallium nitride (GaN) substrate.

23. The method of claim 1 , wherein the nitride horizontal etching layer further comprises an n-type dopant.

24. A method of fabricating a nitride substrate, comprising:
preparing a growth substrate;
forming a sacrificial layer on the growth substrate, the sacrificial layer comprising:
a nitride horizontal etching layer comprising indium gallium nitride (InGaN); and
an upper gallium nitride (GaN) layer disposed on the nitride horizontal etching layer;

partially etching the sacrificial layer to form etching holes, at least some of the etching holes extending to the nitride horizontal etching layer through the upper gallium nitride (GaN) layer;
forming a nitride epitaxial layer on the upper gallium nitride (GaN) layer using hydride vapor phase epitaxy (HVPE); and
separating the nitride epitaxial layer from the growth substrate,
wherein the nitride epitaxial layer is separated from the growth substrate at the nitride horizontal etching layer, and an average width of a first portion of at least one of the etching holes disposed in the upper gallium nitride (GaN) layer is less than that of a second portion of the at least one of the etching holes formed in the nitride horizontal etching layer.

25. The method of claim 24 , wherein the upper gallium nitride (GaN) layer has a thickness less than that of the nitride horizontal etching layer.

26. A wafer for fabrication of a nitride substrate, comprising:
a growth substrate;
a sacrificial layer disposed on the growth substrate, the sacrificial layer comprising:
a nitride horizontal etching layer; and
an upper nitride sacrificial layer disposed on the nitride horizontal etching layer; and

a nitride epitaxial layer disposed on the sacrificial layer,
wherein the sacrificial layer comprises at least one etching hole extending to the nitride horizontal etching layer through the upper nitride sacrificial layer, the etching hole comprising a horizontal etching region disposed within the nitride horizontal etching layer.

27. The wafer of claim 26 , wherein an average width of a first portion of at least one of the etching holes disposed in the upper nitride sacrificial layer is less than that of a second portion of the at least one of the etching holes disposed in the nitride horizontal etching layer.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Park Ki Yon
• Kim Hwa Mok
• Han Chang Suk
• Choi Hyo Shik
• Ko Mi So

Classifications

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title