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US-12154096-B2 · Nov 26, 2024 · US
Techniques for fabricating Janus sensors
US9251978B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9251978-B2 |
| Application number | US-201313875394-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 2, 2013 |
| Priority date | May 2, 2013 |
| Publication date | Feb 2, 2016 |
| Grant date | Feb 2, 2016 |
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Abstract
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Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed therein. Top electrodes are formed above the micro-fluidic channel. One or more Janus components are placed in the micro-fluidic channel, wherein each of the Janus components has a first portion having an electrically conductive material and a second portion having an electrically insulating material. The micro-fluidic channel is filled with a fluid. The electrically insulating material has a negative surface charge at a pH of the fluid and an isoelectric point at a pH less than the pH of the fluid.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating an electromechanical sensor, comprising the steps of: forming a back gate on a substrate; depositing a gate dielectric over the back gate; forming an intermediate layer on the back gate having a micro-fluidic channel formed therein; forming top electrodes above the micro-fluidic channel; placing one or more Janus components in the micro-fluidic channel, wherein each of the Janus components has a first portion comprising an ele…
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Cross-Sectional Technologies · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9251978B2 cover?
- Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed t…
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H01H29/02. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 02 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).