Resist underlayer film-forming composition

Patent metadata

Field	Value
Publication number	US-9250525-B2
Application number	US-201514835209-A
Country	US
Kind code	B2
Filing date	Aug 25, 2015
Priority date	May 7, 2012
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent:

where R 1 is a hydrogen atom or a methyl group; each of R 2 and R 3 is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R 4 is a hydrogen atom or a hydroxy group; Q 1 is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x 1 is 0 or 1; and x 2 is an integer of 1 to 5.

First claim

The invention claimed is:

1. A resist underlayer film-forming composition for lithography, comprising:
a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and
an organic solvent:

where R 1 is a hydrogen atom or a methyl group; each of R 2 and R 3 is independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 6, an alicyclic hydrocarbon group, a phenyl group, a benzyl group, a benzyloxy group, a benzylthio group, an imidazole group, or an indole group; each of the hydrocarbon group, the alicyclic hydrocarbon group, the phenyl group, the benzyl group, the benzyloxy group, the benzylthio group, the imidazole group, and the indole group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R 4 is a hydrogen atom or a hydroxy group; Q 1 is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x 1 is 0 or 1; and x 2 is an integer of 1 to 5,
wherein the polymer further has at least one of structure units represented by Formula (4) in a main chain of the polymer:

where each of A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 is independently a hydrogen atom, a methyl group, or an ethyl group; each of m 1 and m 2 is 1; and Q 2 is a divalent organic group of Formula (5):

where Q 3 is a divalent organic group having at least one of a C 1-10 alkylene group, a C 2-6 alkenylene group, a C 3-10 alicyclic hydrocarbon ring, and a C 6-14 aromatic hydrocarbon ring; the divalent organic group is optionally substituted with at least one selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a hydroxy group, a C 1-6 alkoxy group, a C 2-6 alkoxycarbonyl group, a nitro group, a cyano group, and a C 1-6 alkylthio group; when the divalent organic group has two alkylene groups, two alicyclic hydrocarbon rings, or two aromatic hydrocarbon rings, the two alkylene groups, the two alicyclic hydrocarbon rings, or the two aromatic hydrocarbon rings are optionally bonded to each other through a linking group selected from the group consisting of a sulfonyl group, a disulfide group, a sulfide group, a carbonyl group, a —C(═O)O— group, an —O— group, a —C(CH 3 ) 2 — group, and a —C(CF 3 ) 2 — group; and each of n 1 and n 2 is independently 0 or 1.

2. The resist underlayer film-forming composition for lithography according to claim 1 , wherein
the structure of Formula (1b) is Formula (3):

where R 1 is as defined in Formula (1b); each R 5 is independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 6, a C 1-4 alkoxy group, a C 1-4 alkylthio group, a halogen atom, a cyano group, or a nitro group; v and w are as defined in Formula (1b); and z is an integer of (5-w).

3. The resist underlayer film-forming composition for lithography according to claim 1 , further comprising a cross-linker and a cross-linking catalyst.

4. A method for producing a semiconductor element, the method comprising:
applying the resist underlayer film-forming composition as claimed in claim 1 onto a substrate having a film to be processed;
baking the applied resist underlayer film-forming composition to form a resist underlayer film;
covering the resist underlayer film with a resist;
irradiating the substrate covered with the resist with a KrF excimer laser, an ArF excimer laser, an extreme ultraviolet, or an electron beam;
forming a resist pattern by development; and
patterning the film to be processed by dry etching using the resist pattern as a mask.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Endo Takafumi
• Sakamoto Rikimaru
• Fujitani Noriaki

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title