Passivation of nonlinear optical crystals

Patent metadata

Field	Value
Publication number	US-9250178-B2
Application number	US-201213488635-A
Country	US
Kind code	B2
Filing date	Jun 5, 2012
Priority date	Oct 7, 2011
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

The present invention includes an exposure chamber configured to contain a passivating gas having a selected hydrogen concentration, the exposure chamber further configured to contain at least one NLO crystal for exposure to the passivating gas within the chamber, a passivating gas source fluidically connected to the exposure chamber, the passivating gas source configured to supply passivating gas to an interior portion of the exposure chamber, and a substrate configured to hold the NLO crystal within the chamber, the substrate further configured to maintain a temperature of the NLO crystal at or near a selected temperature, the selected temperature being below a melting temperature of the NLO crystal.

First claim

What is claimed:

1. A system for passivating crystal defects of a nonlinear optical crystal, comprising:
an exposure chamber configured to contain a passivating gas including a selected concentration of at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound, the exposure chamber further configured to contain at least one NLO crystal for exposure to the passivating gas within the chamber;
a passivating gas source fluidically connected to the exposure chamber;
a flow controller fluidically coupled between the passivating gas source and the exposure chamber and configured to selectively supply the passivating gas from the passivating gas source to the exposure chamber;
a substrate including a heating element, the substrate configured to hold the NLO crystal within the chamber; and
a computer controller communicatively coupled to the heating element of the substrate and the flow controller, the computer controller including one or more processors configured to:
supply a flow of passivating gas at a selected flow rate to the exposure chamber with the flow controller; and
maintain a temperature of the NLO crystal between 300° and 350° C., with the heating element of the substrate, during exposure of the at least one NLO crystal to the passivating gas, to repair at least one of dangling bonds or broken bonds within the NLO crystal.

2. The system of claim 1 , wherein the flow controller is configured to maintain the flow rate of passivating gas supplied to the exposure chamber within a range of approximately 10 to 200 cm 3 /min.

3. The system of claim 1 , wherein the substrate is configured to hold an NLO crystal comprising at least one of Beta-Barium Borate (BBO), Lithium Triborate (LBO), Lithium Tetraborate (LTB), Cesium Lithium Borate (CLBO), and Cesium Borate (CBO).

4. The system of claim 1 , wherein the selected concentration of the at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound of the passivating gas is in a range of approximately 5 to 10%.

5. The system of claim 1 , wherein the passivating gas includes at least one of a hydrogen-containing molecule and a deuterium-containing molecule.

6. The system of claim 5 , wherein the at least one of the hydrogen-containing molecule and the deuterium-containing molecule comprises a low molecular weight molecule.

7. The system of claim 6 , wherein the low molecular weight molecule comprises at least one of ammonia or methane.

8. The system of claim 1 , wherein the passivating gas includes at least one inert gas mixed with at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound at a selected concentration.

9. The system of claim 1 , wherein the passivating gas is non-oxygenated.

10. The system of claim 1 , wherein the passivating gas comprises a mixture of hydrogen, deuterium and an inert gas at a selected concentration, wherein the relative amount of deuterium in the mixture provides passivation at or above a selected passivation level.

11. A method for passivating crystal defects of a nonlinear optical crystal, comprising the steps of:
providing a nonlinear optical (NLO) crystal;
maintaining a temperature of the NLO crystal between 300° and 350° C.; and
exposing the NLO crystal to passivating gas having a concentration of at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound at or near a selected concentration to repair at least one of dangling bonds and broken bonds within the NLO crystal.

12. The method of claim 11 , wherein the NLO crystal is an oxide-type non-linear crystal.

13. The method of claim 11 , wherein the NLO crystal comprises at least one of Beta-Barium Borate (BBO), Lithium Triborate (LBO), Lithium Tetraborate (LTB), Cesium Lithium Borate (CLBO), and Cesium Borate (CBO).

14. The method of claim 11 , wherein a degree of passivation of the NLO crystal is monitored utilizing one or more selected absorption bands in an IR, visible, and/or UV spectra of the NLO crystal, wherein a characteristic of the selected absorption band is a function of an abundance of OH bonds of the NLO crystal.

15. The method of claim 11 , wherein the selected concentration of the passivating gas is in a range of approximately 5 to 10%.

16. The method of claim 11 , wherein the passivating gas includes at least one inert gas mixed with at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound at a selected concentration.

17. The method of claim 11 , wherein the passivating gas is non-oxygenated.

18. The system of claim 11 , wherein the passivating gas comprises a mixture of hydrogen, deuterium and an inert gas at a selected concentration, wherein the relative amount of deuterium in the mixture provides passivation at or above a selected passivation level.

19. A method for passivating crystal defects of a nonlinear optical crystal, comprising the steps of:
performing an annealing process on a NLO crystal to reduce water or OH content of the NLO crystal; and
exposing the NLO crystal to passivating gas having a concentration of at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound between 5 and 10% to repair at least one of dangling bonds and broken bonds within the NLO crystal.

20. The method of claim 19 , wherein water content of the NLO crystal is monitored utilizing one or more absorption bands in an IR, visible, and/or UV spectra of the NLO crystal, wherein a characteristic of the selected absorption band is a function of an abundance of OH bonds of the NLO crystal.

21. The method of claim 19 , wherein a degree of passivation of the NLO crystal is monitored utilizing one or more absorption bands in an IR spectrum of the NLO crystal, wherein a characteristic of the selected absorption band is a function of an abundance of OH bonds of the NLO crystal.

22. The method of claim 19 , wherein the passivating gas includes at least one inert gas mixed with at least one of hydrogen, deuterium, a hydrogen-containing compound and a deuterium-containing compound at a selected concentration.

23. The method of claim 19 , wherein the passivating gas is non-oxygenated.

24. The system of claim 19 , wherein the passivating gas comprises a mixture of hydrogen, deuterium and an inert gas at a selected concentration, wherein the relative amount of deuterium in the mixture provides passivation at or above a selected passivation level.

Assignees

• Chuang Yung-Ho
• Dribinski Vladimir
• Kla Tencor Corp

Inventors

• Chuang Yung-Ho
• Dribinski Vladimir

Classifications

• H10P36/00

  Gettering within semiconductor bodies · CPC title

• H10P95/94 Primary

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H01S3/109

  Frequency multiplication, e.g. harmonic generation · CPC title

• G02F1/3501 Primary

  Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title