Area selective carbon-based film deposition
US-2024234127-A1 · Jul 11, 2024 · US
US9246131B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9246131-B2 |
| Application number | US-201013395412-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 3, 2010 |
| Priority date | Sep 10, 2009 |
| Publication date | Jan 26, 2016 |
| Grant date | Jan 26, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
This layered element ( 11 ) for encapsulating an element ( 12 ) that is sensitive to air and/or moisture, especially an element that collects or emits radiation such as a photovoltaic cell or an organic light-emitting diode, comprises a polymer layer ( 1 ) and a barrier layer ( 2 ) against at least one face ( 1 A) of the polymer layer. The barrier layer ( 2 ) has a moisture vapor transfer rate of less than 10 −2 g/m 2 per day and consists of a multilayer of at least two thin hydrogenated silicon nitride layers ( 21, 22, 23, 24 ) having alternately lower and higher densities.
Opening claim text (preview).
The invention claimed is: 1. A device comprising an element that is sensitive to air and/or moisture, characterized in that it comprises: a layered element as a front and/or rear encapsulation element of said sensitive element, wherein the layered element comprises a polymer layer; and a barrier layer against at least one face of the polymer layer, characterized in that the barrier layer has a moisture vapor transfer rate of less than 10 −2 g/m 2 per day and consists of a multilayer of at least two thin hydrogenated silicon nitride layers having alternately lower and higher densities to provide a constituent multilayer of a lower density hydrogenated silicon nitride layer and a higher density hydrogenated silicon nitride layer, wherein the two thin layers comprise a junction zone at an interface between the two thin layers, the junction zone having a density gradient between the density of the lower density hydrogenated silicon nitride layer and the higher density hydrogenated silicon nitride layer. 2. The device according to claim 1 that collects or emits radiation, characterized in that the sensitive element is an element that collects or emits radiation, which is arranged relative to the layered element so as to be capable of collecting radiation that passes through the polymer layer and the barrier layer, or of emitting radiation through the polymer layer and the barrier layer. 3. The device according to claim 2 , characterized in that the element that collects or emits radiation is a photovoltaic cell or an organic light-emitting diode. 4. A layered element for encapsulating an element that is sensitive to air and/or moisture that collects or emits radiation comprising a photovoltaic cell or an organic light-emitting diode, the layered element comprising: a polymer layer; and a barrier layer against at least one face of the polymer layer, characterized in that the barrier layer has a moisture vapor transfer rate of less than 10 −2 g/m 2 per day and consists of a multilayer of at least two thin hydrogenated silicon nitride layers, having alternately lower and higher densities to provide a constituent multilayer of a lower density hydrogenated silicon nitride layer and a higher density hydrogenated silicon nitride layer, wherein the two thin layers comprise a junction zone at an interface between the two thin layers, the junction zone having a density gradient between the density of the lower density hydrogenated silicon nitride layer and the higher density hydrogenated silicon nitride layer. 5. The layered element according to claim 4 , characterized in that the difference between the density of the higher density hydrogenated silicon nitride layer and the density of the lower density hydrogenated silicon nitride layer of each pair of successive thin layers of the constituent multilayer of the barrier layer is greater than or equal to 10% of the density of the lower density hydrogenated silicon nitride layer. 6. The layered element according to claim 4 , characterized in that the barrier layer is positioned against the face of the polymer layer intended to be facing the sensitive element and/or the barrier layer is positioned against the face of the polymer layer intended to be facing the other way from the sensitive element. 7. The layered element according to claim 4 , characterized in that the polymer layer is a substrate made of a thermoplastic polymer. 8. The layered element according to claim 4 , characterized in that the polymer layer is a lamination interlayer. 9. The layered element according to claim 4 , characterized in that the polymer layer and the barrier layer are transparent, a geometric thickness of each thin layer of the barrier layer being adapted in order to maximize the transmission of radiation through the layered element, to or from the sensitive element, via an antireflection effect. 10. The layered element according to claim 9 , characterized in that the higher density hydrogenated silicon nitride layer has a refractive index between 1.8 and 1.9 at 550 nm and the lower density hydrogenated silicon nitride layer has a refractive index between 1.7 and 1.8 at 550 nm. 11. A process for manufacturing the layered element according to claim 1 , the process comprising the step of depositing the at least two thin hydrogenated silicon nitride layers by plasma enhanced chemical vapor deposition (PECVD) or sputtering. 12. The manufacturing process according to claim 11 , wherein the at least two thin hydrogenated silicon nitride layers are deposited by plasma enhanced chemical vapor deposition (PECVD). 13. The manufacturing process according to claim 11 , wherein the at least two thin hydrogenated silicon nitride layers are deposited by sputtering. 14. The manufacturing process according to claim 11 , wherein the polymer layer is a thermoplastic polymer substrate, the face of said thermoplastic polymer substrate is activated by means of a plasma.
using layers comprising organic materials · CPC title
Optical components · CPC title
Multilayers · CPC title
Silicon nitride · CPC title
Protective coatings, e.g. hard coatings · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.