Avalanche photodiode
US-2024204127-A1 · Jun 20, 2024 · US
US9246034B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9246034-B2 |
| Application number | US-56290709-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2009 |
| Priority date | Sep 29, 2008 |
| Publication date | Jan 26, 2016 |
| Grant date | Jan 26, 2016 |
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A method of manufacturing a solar cell, including: forming a first conductivity type semiconductor layer extending along a predetermined direction on aback surface of a semiconductor substrate that has a light-receiving surface and the back surface opposite to the light-receiving surface, the first-conductivity-type semiconductor layer being divided into plural island-shaped sections arranged side by side in the predetermined direction; forming a semiconductor layer of a second conductivity type in the predetermined direction on the back surface; and forming conductive layers respectively on the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer by using a conductive paste, the conductive layer to be formed on the first-conductivity-type semiconductor layer being formed by a printing method such that the conductive layer to be formed on the first-conductivity-type semiconductor layer extends on a line of the plural island-shaped sections to bridge adjacent two of the plural island-shaped sections.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a solar cell, comprising: a step A of forming a semiconductor layer of a first conductivity type extending along a predetermined direction on a back surface of a semiconductor substrate of the first conductivity type that includes a light-receiving surface and with the back surface located on an opposite side to the light-receiving surface, the first-conductivity-type semiconductor layer being divided into plural island-shaped sections side by side in the predetermined direction, the first-conductivity-type semiconductor layer being formed using a metal mask including: plural slits corresponding to the plural island-shaped sections; and a divide portion between adjacent two of the slits; a step B of forming a semiconductor layer of a second conductivity type in the predetermined direction on the back surface so as to have a width that is larger than a width of the first-conductivity-type semiconductor layer; and a step C of forming a conductive layer respectively on the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer by using a conductive paste, the conductive layer to be formed on the first-conductivity-type semiconductor layer being formed by a printing method such that a conductive layer to be formed on the first-conductivity-type semiconductor layer extends on a line of the plural island-shaped sections to bridge directly adjacent two of the plural island-shaped sections. 2. The method of manufacturing a solar cell according to claim 1 , wherein forming the semiconductor layer of the first conductivity type is done by chemical vapor deposition (CVD). 3. The method of manufacturing a solar cell according to claim 2 , wherein forming the semiconductor layer of the second conductivity type is done by CVD.
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