Nonvolatile semiconductor memory device

Patent metadata

Field	Value
Publication number	US-9245969-B2
Application number	US-201514821368-A
Country	US
Kind code	B2
Filing date	Aug 7, 2015
Priority date	Feb 21, 2013
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.

First claim

What is claimed is:

1. A nonvolatile semiconductor memory device, comprising:
a semiconductor layer;
a control gate electrode; and
an organic molecular layer formed between the semiconductor layer and the control gate electrode, the organic molecular layer having a first organic molecular film on the semiconductor layer side containing first organic molecules, the organic molecular layer having second organic molecular film on the control gate electrode side containing second organic molecules, the first organic molecule having a charge storing unit, the second organic molecule being an amphiphilic organic molecule.

2. The device according to claim 1 , wherein the amphiphilic organic molecule contains straight chain saturated hydrocarbon.

3. The device according to claim 1 , wherein
the amphiphilic organic molecule has a hydrophobic unit and a hydrophilic unit,
the hydrophobic unit is an alkyl chain, a fluoroalkyl chain, a polysilane chain or a phenylene chain, and
the hydrophilic unit has one of an ether group, a carboxy group, a hydroxy group, an amino group or a thiol group.

4. The device according to claim 1 , wherein the amphiphilic organic molecule is polyethylene glycol alkylether shown in General Formula (I),

wherein, n is an integer not smaller than 3 and not larger than 20, and m is an integer not smaller than 3 and not larger than 20.

5. The device according to claim 1 , wherein the amphiphilic organic molecule is trisiloxanepolyethylene glycol shown in General Formula (II),

wherein, n is an integer not smaller than 3 and not larger than 20, and m is an integer not smaller than 3 and not larger than 20.

6. The device according to claim 1 , wherein the amphiphilic organic molecule is pentaethyleneglycol monododecylether.

7. A nonvolatile semiconductor memory device, comprising:
a stacked structure having insulating layers and control gate electrode layers, the insulating layers and the control gate electrode layers being alternately stacked;
a block insulating film provided on a side surface of a hole penetrating the stacked structure from its top surface to the lowermost control gate electrode layer with respect to a stacking direction of the stacked structure;
an organic molecular layer having a first organic molecular film formed on an inner surface of the block insulating film containing first organic molecules, the organic molecular layer having a second organic molecular film formed on an inner surface of the first organic molecular film containing second organic molecules, the first organic molecule having a charge storing unit, the second organic molecule being an amphiphilic organic molecule;
a tunnel insulating film provided on the inner surface of the organic molecular layer; and
a semiconductor layer provided on the inner surface of the tunnel insulating film.

8. The device according to claim 7 , wherein
the amphiphilic organic molecule has a hydrophobic unit and a hydrophilic unit,
the hydrophobic unit is an alkyl chain, a fluoroalkyl chain, a polysilane chain or a phenylene chain, and
the hydrophilic unit has one of an ether group, a carboxy group, a hydroxy group, an amino group or a thiol group.

9. The device according to claim 7 , wherein the amphiphilic organic molecule is polyethylene glycol alkylether shown in General Formula (I),

wherein, n is an integer not smaller than 3 and not larger than 20, and m is an integer not smaller than 3 and not larger than 20.

10. The device according to claim 7 , wherein the amphiphilic organic molecule is trisiloxanepolyethylene glycol shown in General Formula (II),

wherein, n is an integer not smaller than 3 and not larger than 20, and m is an integer not smaller than 3 and not larger than 20.

11. The device according to claim 7 , wherein the amphiphilic organic molecule is pentaethyleneglycol monododecylether.

Assignees

• Toshiba Kk

Inventors

• Hattori Shigeki
• Terai Masaya
• Nishizawa Hideyuki
• Asakawa Koji
• Fukuzumi Yoshiaki

Classifications

• G11C16/0483

  comprising cells having several storage transistors connected in series · CPC title

• G11C13/0014

  comprising cells based on organic memory material · CPC title

• H10K19/80

  Interconnections, e.g. terminals · CPC title

• H10D64/681

  having a compositional variation, e.g. multilayered · CPC title

• H10D30/694 Primary

  characterised by the shapes, relative sizes or dispositions of the gate electrodes · CPC title