Formation of alloy liner by reaction of diffusion barrier and seed layer for interconnect application

Patent metadata

Field	Value
Publication number	US-9245794-B2
Application number	US-201213614492-A
Country	US
Kind code	B2
Filing date	Sep 13, 2012
Priority date	Jul 27, 2009
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

An interconnect structure including an alloy liner positioned directly between a diffusion barrier and a Cu alloy seed layer as well as methods for forming such an interconnect structure are provided. The alloy liner of the present invention is formed by thermally reacting a previously deposited diffusion barrier metal alloy layer with an overlying Cu alloy seed layer. During the thermal reaction, the metal alloys from the both the diffusion barrier and the Cu alloys seed layer react forming a metal alloy reaction product between the diffusion barrier and the Cu seed layer.

First claim

What is claimed is:

1. An interconnect structure comprising:
a dielectric material including at least one opening therein;
an alloy metal A deficient diffusion barrier located within said at least one opening;
an alloy liner located directly on said alloy metal A deficient diffusion barrier, said alloy liner consists of a thermal reaction product of alloy metal A and alloy metal B;
an alloy metal B deficient Cu alloy seed layer located directly on said alloy liner; and
an interconnect conductive material located within the at least one opening atop said alloy metal B deficient Cu alloy seed layer, wherein alloy metal A is a transition metal selected from Group IVB, VB, VIB, VIIB or VIII of the Periodic Table of Elements, and alloy metal B is a transition metal from Group IVB, VB, VIB, VIIB or VIII of the Periodic Table of Elements or a metal from Group IIIA of the Periodic Table of Elements, with the proviso that alloy metal B is different from alloy metal A.

2. The interconnect structure of claim 1 wherein said dielectric material is one of SiO 2 , a silsesquioxane, a C doped oxide that includes atoms of Si, C, O and H, or a thermosetting polyarylene ether.

3. The interconnect structure of claim 1 wherein said at least one opening is a line opening, a combined line opening and via opening, or combinations thereof.

4. The interconnect structure of claim 1 wherein said alloy metal A deficient diffusion barrier further includes M 1 wherein M 1 is one of Ta, Ti, Ru, W, Co, W, Ir, Rh or Pt and M 1 is different from alloy metal A.

5. The interconnect structure of claim 4 wherein said alloy metal A deficient diffusion barrier further includes nitrogen.

6. The interconnect structure of claim 1 wherein said alloy metal A deficient diffusion barrier further includes nitrogen.

7. The interconnect structure of claim 1 wherein said alloy metal A is one of Ru, Ir , Co or Pt, and alloy metal B is one of Al, Ir, Pt or Mn.

8. The interconnect structure of claim 1 wherein said alloy metal A deficient diffusion barrier is completely devoid of alloy metal A and said alloy B deficient Cu alloy seed layer is completely devoid of alloy metal B.

9. The interconnect structure of claim 1 wherein said interconnect conductive material is one of a conductive metal, an alloy comprising at least one conductive metal, or a conductive metal silicide.

10. The interconnect structure of claim 9 wherein said interconnect conductive material is a conductive metal selected from the group consisting of Cu, Al, W and A 1 Cu.

11. The interconnect structure of claim 1 wherein said alloy metal A deficient diffusion barrier, said alloy liner and said an alloy metal B deficient Cu alloy seed layer are each continuously present within said at least one opening.

12. The interconnect structure of claim 1 wherein said alloy metal A deficient diffusion barrier, said alloy liner and said an alloy metal B deficient Cu alloy seed layer are absent from a bottom portion of said at least one opening.

13. The interconnect structure of claim 1 wherein said alloy metal A deficient diffusion barrier, said alloy liner and said an alloy metal B deficient Cu alloy seed layer each have an uppermost surface that is coplanar with an uppermost surface of the dielectric material and said interconnect conductive material.

14. The interconnect structure of claim 1 further comprising another dielectric material including another interconnect conductive material located beneath said dielectric material.

15. The interconnect structure of claim 14 wherein a portion of said alloy metal A deficient diffusion barrier within a bottom portion of said at least one opening is in direct contact with a portion of said another interconnect conductive material.

16. The interconnect structure of claim 14 further comprising dielectric capping layer positioned between said dielectric material and said another dielectric material, wherein said dielectric capping layer includes a second opening located therein that exposes an uppermost surface of a portion of said another interconnect conductive material.

17. The interconnect structure of claim 16 wherein a portion of said alloy metal A deficient diffusion barrier contacts a sidewall of said dielectric capping layer.

Assignees

• Yang Chih-Chao
• Edelstein Daniel C
• Nogami Takeshi
• Globalfoundries Inc

Inventors

• Yang Chih-Chao
• Edelstein Daniel C
• Nogami Takeshi

Classifications

• H10W20/034

  bottomless barrier, adhesion or liner layers · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/055

  by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition · CPC title

• H10W20/049

  by diffusing alloying elements · CPC title

• H10W20/043

  for electroplating · CPC title