Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

Patent metadata

Field	Value
Publication number	US-9245608-B2
Application number	US-201213571406-A
Country	US
Kind code	B2
Filing date	Aug 10, 2012
Priority date	Sep 22, 2011
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

First claim

What is claimed is:

1. A magnetic tunnel junction (MTJ) comprising:
a reference layer;
a composite perpendicular magnetic anisotropy (PMA) layer including a first PMA free layer, a PMA assist layer, and a PMA coupling layer between the first PMA free layer and the PMA assist layer, the coupling layer abutting the first PMA free layer and the PMA assist layer;
a tunnel barrier layer between the reference layer and the composite PMA layer;
a longitudinal magnetic anisotropy (LMA) free layer between the tunnel barrier layer and the composite PMA layer;
a spacer layer between the LMA free layer and the composite PMA layer;
a PMA promotion layer coupled to the composite PMA layer, the PMA promotion layer abutting the PMA assist layer; and
a hard mask layer abutting the PMA promotion layer.

2. The MTJ of claim 1 , in which the first PMA free layer material is CoFeB.

3. The MTJ of claim 2 , in which the PMA free layer comprises a thickness of less than 2 nanometers.

4. The MTJ of claim 1 , in which at least one of the first PMA free layer and the-PMA assist layer comprises a thermal stability enhancement layer.

5. The MTJ of claim 1 , in which the reference layer comprises a PMA reference layer.

6. The MTJ of claim 1 , integrated in at least one of a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and a fixed location data unit.

7. The MTJ of claim 1 , in which the PMA coupling layer is made from Ru, Cr and/or Ta.

8. A method of constructing a perpendicular MTJ, comprising:
depositing a reference layer;
depositing a composite perpendicular magnetic anisotropy (PMA) layer including a first PMA free layer, a PMA assist layer, and a PMA coupling layer between the first PMA free layer and the PMA assist layer, the coupling layer abutting the first PMA free layer and the PMA assist layer;
depositing a tunnel barrier layer between the reference layer and the composite PMA layer;
depositing a longitudinal magnetic anisotropy (LMA) free layer between the tunnel barrier layer and the composite PMA layer;
depositing a spacer layer between the LMA free layer and the composite PMA layer;
depositing a PMA promotion layer on the composite PMA layer, the PMA promotion layer abutting the PMA assist layer; and
depositing a hard mask layer on the PMA promotion layer, the hard mask layer abutting the PMA promotion layer.

9. The method of claim 8 , further comprising integrating the MTJ into at least one of a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and a fixed location data unit.

10. The method of claim 8 , in which the PMA coupling layer is made from Ru, Cr and/or Ta.

11. A magnetic tunnel junction (MTJ) comprising:
a longitudinal magnetic anisotropy (LMA) reference layer;
a tunnel barrier layer on the LMA reference layer, the tunnel barrier layer abutting the reference layer
an LMA free layer on the tunnel barrier layer, the LMA free layer abutting the tunnel barrier layer;
a spacer layer on the LMA free layer, the spacer layer abutting the LMA free layer;
a first perpendicular magnetic anisotropy (PMA) switching assist layer on the spacer layer, the first PMA switching assist layer abutting the spacer layer;
a PMA coupling layer on the first PMA switching assist layer, the PMA coupling layer abutting the first PMA switching assist layer;
a second PMA switching assist layer on the PMA coupling layer, the second PMA switching assist layer abutting the PMA coupling layer;
a PMA promotion layer on the second PMA switching assist layer, PMA promotion layer abutting the second PMA switching assist layer;
a hard mask layer on the PMA promotion layer, the hard mask layer abutting the PMA promotion layer.

12. The MTJ of claim 11 , in which the first PMA switching assist layer material and/or the second PMA switching assist layer material is CoFeB.

13. The MTJ of claim 11 , in which the first PMA switching assist layer and the second PMA switching assist layer each comprise a thickness of less than 2 nanometers.

14. The MTJ of claim 11 , in which the first PMA switching assist layer and/or the second PMA switching assist layer comprises a thermal stability enhancement layer.

15. The MTJ of claim 11 , in which the PMA coupling layer is made from Ru, Cr and/or Ta.

16. The MTJ of claim 11 , integrated in at least one of a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and a fixed location data unit.

Assignees

• Chen Wei-Chuan
• Lee Kangho
• Zhu Xiaochun
• Kang Seung H
• Qualcomm Inc

Inventors

• Chen Wei-Chuan
• Lee Kangho
• Zhu Xiaochun
• Kang Seung H

Classifications

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• G11C11/15 Primary

  using multiple magnetic layers (G11C11/155 takes precedence) · CPC title

• H01L43/08

  Electricity · mapped topic

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/85

  Materials of the active region · CPC title