Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device
US-9213237-B2 · Dec 15, 2015 · US
Chemically amplified negative resist composition and pattern forming process
US9244348B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9244348-B2 |
| Application number | US-201213371999-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 13, 2012 |
| Priority date | Feb 13, 2012 |
| Publication date | Jan 26, 2016 |
| Grant date | Jan 26, 2016 |
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Abstract
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A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.
First claim
Opening claim text (preview).
The invention claimed is: 1. A process for forming a resist pattern, comprising the steps of: applying a chemically amplified negative resist composition onto a processable substrate to form a resist film having a thickness of up to 100 nanometers thereon, exposing patternwise the resist film to high-energy radiation, and developing the exposed resist film with an alkaline developer to form a resist pattern having a narrow line width of 50 nanometers or less and having a desig…
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Physics · mapped topic
- G03F7/0382Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9244348B2 cover?
- A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resoluti…
- Who is the assignee on this patent?
- Masunaga Keiichi, Watanabe Satoshi, Kawai Yoshio, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0382. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jan 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).