Superalloy target
US-11866805-B2 · Jan 9, 2024 · US
Sintered material, and process for producing same
US9243318B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9243318-B2 |
| Application number | US-201214006851-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2012 |
| Priority date | Mar 24, 2011 |
| Publication date | Jan 26, 2016 |
| Grant date | Jan 26, 2016 |
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- Title
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Abstract
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A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 μm 3 or more in an amount of 0.03 vol % or less.
First claim
Opening claim text (preview).
The invention claimed is: 1. A sputtering target which consists essentially of an oxide of indium and gallium or an oxide of indium, gallium and tin and/or aluminum and comprises voids each having a volume of 14000 μm 3 or more in an amount of 0.03 vol % or less of the volume of the sputtering target. 2. The sputtering target according to claim 1 , wherein one surface of the sintered body has an area of 25000 mm 2 or more and a thickness of 5 mm or more. 3. The sputtering target according to claim 1 , which has an atomic ratio represented by Ga/(In+Ga) of 0.01 to 0.13 and comprises a bixbyite structure represented by In 2 O 3 . 4. The sputtering target according to claim 1 , which comprises tin in an amount of 100 to 10000 ppm. 5. The sputtering target according to claim 1 , which comprises Al in an amount of 100 to 10000 ppm. 6. A method for producing an oxide thin film, wherein a film is formed using the sputtering target according to claim 1 by a sputtering method at a sputtering power of 3 to 20 W/cm 2 .
Assignees
Inventors
Classifications
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
using physical deposition, e.g. vacuum deposition or sputtering · CPC title
Bonding of wafers, substrates or parts of devices · CPC title
Density · CPC title
Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate · CPC title
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Frequently asked questions
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- What does patent US9243318B2 cover?
- A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 μm 3 or more in an amount of 0.03 vol % or less.
- Who is the assignee on this patent?
- Tomai Shigekazu, Matsuzaki Shigeo, Yano Koki, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).