Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

Patent metadata

Field	Value
Publication number	US-9240443-B2
Application number	US-201314144738-A
Country	US
Kind code	B2
Filing date	Dec 31, 2013
Priority date	Dec 31, 2012
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

First claim

What is claimed is:

1. A method of preparing a gap filler agent, the method comprising:
adding a halosilane to a basic solvent; and
to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr, wherein:
the gap filler agent includes a hydrogenated polysiloxazane formed from the halosilane, and the hydrogenated polysiloxazane includes a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2:

wherein, in Chemical Formulae 1 and 2, R 1 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof.

2. The method as claimed in claim 1 , wherein the ammonia is added at a rate of about 2 g/hr to about 9 g/hr.

3. The method as claimed in claim 1 , wherein the ammonia is added at a rate of about 3 g/hr to about 7 g/hr.

4. The method as claimed in claim 1 , wherein the halosilane includes one or more of RSiX 3 , R 2 SiX 2 , or R 3 SiX, wherein each R is independently selected from hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, and a combination thereof, provided that at least one R of the halosilane is hydrogen, and each X is independently a halogen atom.

5. The method as claimed in claim 1 , wherein the basic solvent has a basic amine group and includes one or more of trimethylamine, dimethylethylamine, diethylmethylamine, triethylamine, pyridine, picoline, dimethylaniline, trimethylphosphine, dimethylethylphosphine, methyldiethylphosphine, triethylphosphine, trimethylarsine, trimethylstibine, or triazine.

6. The method as claimed in claim 1 , wherein the hydrogenated polysiloxazane includes a moiety represented by the following Chemical Formula 3 at a terminal end in an amount of about 15 to about 35% based on the total amount of Si—H bonds in the hydrogenated polysiloxazane structure:
*—SiH 3   [Chemical Formula 3].

7. The method as claimed in claim 1 , wherein the hydrogenated polysiloxazane has a weight average molecular weight (Mw) of about 1,000 to about 10,000.

8. The method as claimed in claim 1 , wherein the hydrogenated polysiloxazane has an oxygen content of about 0.2 to about 3 wt %.

9. A method of manufacturing a semiconductor capacitor, the method comprising:
providing a mold having a gap on a semiconductor substrate;
providing a conductive layer on the semiconductor substrate and the mold;
coating a gap filler agent on the gap and the conductive layer to provide a filler layer;
heat-treating the filler layer;
developing a part of the filler layer to provide a filler pattern filled in the gap;
removing a part of the conductive layer to separate a plurality of the first electrodes;
removing the mold and the filler pattern;
providing a dielectric layer on the first electrode; and
providing a second electrode on the dielectric layer,
wherein the gap filler agent is prepared by the method as claimed in claim 1 .

10. A method of preparing a gap filler agent, the method comprising:
adding a halosilane to a basic solvent; and
to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr,
wherein the gap filler agent includes a hydrogenated polysilazane formed from the halosilane, and the hydrogenated polysilazane includes a moiety represented by the following Chemical Formula 1:

wherein R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof, and
wherein the hydrogenated polysilazane includes a moiety represented by the following Chemical Formula 3 at a terminal end in an amount of about 15 to about 35% based on the total amount of Si—H bonds in the hydrogenated polysilazane structure:
*—SiH 3   [Chemical Formula 3].

11. The method as claimed in claim 10 , wherein the hydrogenated polysilazane has a weight average molecular weight (Mw) of about 1,000 to about 10,000.

12. A method of manufacturing a semiconductor capacitor, the method comprising:
providing a mold having a gap on a semiconductor substrate;
providing a conductive layer on the semiconductor substrate and the mold;
coating a gap filler agent on the gap and the conductive layer to provide a filler layer;
heat-treating the filler layer;
developing a part of the filler layer to provide a filler pattern filled in the gap;
removing a part of the conductive layer to separate a plurality of the first electrodes;
removing the mold and the filler pattern;
providing a dielectric layer on the first electrode; and
providing a second electrode on the dielectric layer,
wherein the gap filler agent is prepared by the method as claimed in claim 10 .

13. A method of preparing a gap filler agent, the method comprising:
adding a halosilane to a basic solvent;
to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr;
removing a halogen ammonium salt generated from the halosilane; and
polymerizing the halogen ammonium salt to provide a hydrogenated polysilazane.

14. A method of manufacturing a semiconductor capacitor, the method comprising:
providing a mold having a gap on a semiconductor substrate;
providing a conductive layer on the semiconductor substrate and the mold;
coating a gap filler agent on the gap and the conductive layer to provide a filler layer;
heat-treating the filler layer;
developing a part of the filler layer to provide a filler pattern filled in the gap;
removing a part of the conductive layer to separate a plurality of the first electrodes;
removing the mold and the filler pattern;
providing a dielectric layer on the first electrode; and
providing a second electrode on the dielectric layer,
wherein the gap filler agent is prepared by the method as

Assignees

• Bae Jin-Hee
• Lee Han-Song
• Kwak Taek-Soo
• Kim Go-Un
• Kim Bo-Sun
• Kim Sang-Kyun
• Na Yoong-Hee
• Park Eun-Su
• Seo Jin-Woo
• Song Hyun-Ji
• Lim Sang-Hak
• Lim Wan-Hee
• Hong Seung-Hee
• Hwang Byeong-Gyu
• Cheil Ind Inc

Inventors

• Bae Jin-Hee
• Lee Han-Song
• Kwak Taek-Soo
• Kim Go-Un
• Kim Bo-Sun
• Kim Sang-Kyun
• Na Yoong-Hee
• Park Eun-Su
• Seo Jin-Woo
• Song Hyun-Ji
• Lim Sang-Hak
• Lim Wan-Hee
• Hong Seung-Hee
• Hwang Byeong-Gyu

Classifications

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10D1/716

  having vertical extensions · CPC title

• H10D1/043 Primary

  using patterning processes to form electrode extensions, e.g. etching · CPC title