Semiconductor memory device

Patent metadata

Field	Value
Publication number	US-9240416-B2
Application number	US-201414487359-A
Country	US
Kind code	B2
Filing date	Sep 16, 2014
Priority date	Jun 12, 2014
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A semiconductor memory device according to an embodiment includes a stacked body with electrode films and inter-electrode insulating films alternately stacked therein, a semiconductor member, a charge accumulation film, an insulating member and a floating electrode member. The semiconductor member is provided in the stacked body. The insulating member is provided at a position opposed to the inter-electrode insulating film on a side surface of the charge accumulation film. The insulating member is divided for each of the inter-electrode insulating films. The floating electrode member is provided on a region of the side surface of the charge accumulation film not covered with the insulating member. The floating electrode member is in contact with the charge accumulation film. The floating electrode member is divided for each of the electrode films. The floating electrode member has higher conductivity than the charge accumulation film.

First claim

What is claimed is:

1. A semiconductor memory device comprising:
a stacked body with electrode films and inter-electrode insulating films alternately stacked therein;
a semiconductor member provided in the stacked body and extending in stacking direction of the electrode films and the inter-electrode insulating films;
a first insulating film provided on a side surface of the semiconductor member;
a charge accumulation film provided on a side surface of the first insulating film;
an insulating member provided at a position opposed to the inter-electrode insulating film on a side surface of the charge accumulation film, divided for each of the inter-electrode insulating films along the stacking direction, and made of a material different from that of the charge accumulation film;
a floating electrode member provided on a region of the side surface of the charge accumulation film not covered with the insulating member, being in contact with the charge accumulation film, divided for each of the electrode films along the stacking direction, and having higher conductivity than the charge accumulation film; and
a second insulating film provided between the floating electrode member and the electrode film.

2. The device according to claim 1 , wherein
the inter-electrode insulating film and the insulating member include silicon oxide, and
the charge accumulation film includes silicon nitride.

3. The device according to claim 1 , wherein the floating electrode member includes one or more materials selected from the group consisting of metal, metal oxide, and metal nitride.

4. The device according to claim 1 , wherein the floating electrode member includes one or more materials selected from the group consisting of silicon, tungsten, ruthenium, platinum, tantalum, tantalum oxide, ruthenium oxide, tantalum nitride, tungsten nitride, and silicon nitride.

5. The device according to claim 1 , wherein part of the second insulating film includes a high work function material.

6. The device according to claim 5 , wherein the high work function material includes one or more materials selected from the group consisting of ruthenium, platinum, gold, tungsten, and tantalum.

7. The device according to claim 1 , wherein an end part of the insulating member in the stacking direction extends out from a space between the inter-electrode insulating film and the charge accumulation film.

8. The device according to claim 7 , wherein the extending portion has a tapered shape thinned toward the end part.

9. The device according to claim 1 , wherein length of the insulating member is shorter than length of the inter-electrode insulating film in the stacking direction.

10. The device according to claim 1 , wherein thickness of the floating electrode member is thicker than thickness of the insulating member in a direction orthogonal to the stacking direction.

11. The device according to claim 1 , wherein thickness of the floating electrode member is thinner than thickness of the insulating member in a direction orthogonal to the stacking direction.

12. The device according to claim 1 , wherein part of the second insulating film is placed between the charge accumulation film and the inter-electrode insulating film in a direction orthogonal to the stacking direction.

13. The device according to claim 12 , wherein part of the electrode film is placed between the charge accumulation film and the inter-electrode insulating film in a direction orthogonal to the stacking direction.

14. A semiconductor memory device comprising:
a stacked body with electrode films and inter-electrode insulating films alternately stacked therein;
a semiconductor member provided in the stacked body and extending in stacking direction of the electrode films and the inter-electrode insulating films;
a first insulating film provided on a side surface of the semiconductor member;
a charge accumulation film provided on a side surface of the first insulating film;
an insulating member provided at a position opposed to the inter-electrode insulating film on a side surface of the charge accumulation film and divided for each of the inter-electrode insulating films along the stacking direction, length of the insulating member in the stacking direction being shorter than length of the inter-electrode insulating film in the stacking direction; and
a second insulating film provided between the charge accumulation film and the electrode film and between the charge accumulation film and the inter-electrode insulating film.

15. The device according to claim 14 , wherein part of the electrode film is placed between the charge accumulation film and the inter-electrode insulating film.

16. The device according to claim 14 , wherein the second insulating film includes aluminum oxide or hafnium oxide.

17. The device according to claim 14 , further comprising:
a floating electrode member provided on a region of the side surface of the charge accumulation film not covered with the insulating member, being in contact with the charge accumulation film, divided for each of the electrode films along the stacking direction, and having higher conductivity than the charge accumulation film.

Assignees

• Toshiba Kk

Inventors

• Shimura Yasuhiro
• Higuchi Masaaki
• Ishigaki Hirokazu
• Okamoto Tatsuya

Classifications

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title

• H10D64/665

  the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671) · CPC title

• H10D64/661

  the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation (having lateral variation in the gate structure H10D64/671) · CPC title