Semiconductor module, semiconductor device having semiconductor module, and method of manufacturing semiconductor module

Patent metadata

Field	Value
Publication number	US-9240371-B2
Application number	US-201214235571-A
Country	US
Kind code	B2
Filing date	Aug 9, 2012
Priority date	Aug 10, 2011
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A semiconductor module is configured such that heat radiation substrates are connected to lead frames and semiconductor chips are directly connected to the lead frames, so that the semiconductor chips are not connected to the lead frames through conductive portions of the heat radiation substrates. Therefore, the conductive portion can have a solid shape without being divided. As such, an occurrence of curving of the heat radiation substrates is suppressed when a temperature is reduced from a high temperature to a room temperature after resin-sealing at the high temperature or the like. Therefore, connection between the semiconductor chip and the lead frames and connection between the lead frames and the heat radiation substrates enhance.

First claim

The invention claimed is:

1. A semiconductor module comprising:
a semiconductor chip having a front surface and a rear surface, the semiconductor chip being provided with a vertical-type semiconductor power element, the semiconductor chip having a signal line electrode and a front surface electrode on the front surface, and a rear surface electrode on the rear surface;
a first lead frame being connected to the rear surface electrode of the semiconductor chip and including a first terminal;
a second lead frame including a signal line terminal that is connected to the signal line electrode of the semiconductor chip, and a plate portion that is connected to the front surface electrode of the semiconductor chip, and from which a second terminal extends;
a first heat radiation substrate being joined to a surface of the first lead frame opposite to a surface on which the semiconductor chip is disposed;
a second heat radiation substrate being joined to a surface of the second lead frame opposite to a surface on which the semiconductor chip is disposed; and
a resin part, wherein the semiconductor chip, the first lead frame the second lead frame, the first heat radiation substrate and the second heat radiation substrate are sealed by the resin part such that the first terminal and the second terminal are exposed from the resin part and a surface of the first heat radiation substrate opposite to a surface joined to the first lead frame and a surface of the second heat radiation substrate opposite to a surface joined to the second lead frame are exposed from the resin part, wherein
each of the first heat radiation substrate and the second heat radiation substrate includes a first conductive portion, a second conductive portion and an insulated substrate, the first conductive portion providing the surface joined to corresponding one of the first lead frame and the second lead frame, the second conductive portion providing the surface exposed from the resin part, the insulated substrate being disposed between the first conductive portion and the second conductive portion,
each of the first conductive portion and the second conductive portion has a solid shape without being divided, and
the first conductive portion and the second conductive portion have a symmetric shape.

2. The semiconductor module according to claim 1 , wherein
the first lead frame and the first heat radiation substrate are disposed on one side of the semiconductor chip to provide a component structure,
the second lead frame and the second heat radiation substrate are disposed on the other side of the semiconductor chip to provide a component structure, and
the component structure of the one side of the semiconductor chip and the component structure of the other side of the semiconductor chip are symmetric with respect to the semiconductor chip.

3. A semiconductor module comprising:
a first semiconductor chip and a second semiconductor chip each having a front surface and a rear surface, each of the first semiconductor chip and the second semiconductor chip being provided with a vertical-type semiconductor power element, each of the first semiconductor chip and the second semiconductor chip having a signal line electrode and a front surface electrode on the front surface, and a rear surface electrode on the rear surface;
a first lead frame being connected to the rear surface electrode of the first semiconductor chip, and including a first terminal;
a second lead frame including a signal line terminal that is connected to the signal line electrode of the first semiconductor chip, and a plate portion that is connected to the front surface electrode of the first semiconductor chip and the rear surface electrode of the second semiconductor chip, and from which a second terminal extends;
a third lead frame including a signal line terminal that is connected to the signal line electrode of the second semiconductor chip, and a plate portion that is connected to the front surface electrode of the second semiconductor chip, and from which a third terminal extends;
a first heat radiation substrate being joined to a surface of the first lead frame opposite to a surface on which the first semiconductor chip is disposed;
a second heat radiation substrate and a third heat radiation substrate being joined to a surface of the second lead frame opposite to a surface on which the first semiconductor chip and the second semiconductor chip are disposed;
a fourth heat radiation substrate being joined to a surface of the third lead frame opposite to a surface on which the second semiconductor chip is disposed; and
a resin part, wherein the first and second semiconductor chips, the first to third lead frames, and the first to fourth heat radiation substrates are sealed by the resin part such that the first to third terminals are exposed from the resin part and surfaces of the first to fourth heat radiation substrate opposite to surfaces joined to the first to third lead frames are exposed from the resin part, wherein
each of the first to fourth heat radiation substrates include a first conductive portion, a second conductive portion and an insulated substrate, the first conductive portion providing the surface joined to corresponding one of the first to third lead frames, the second conductive portion providing the surface exposed from the resin part, the insulated substrate being disposed between the first conductive portion and the second conductive portion,
each of the first conductive portion and the second conductive portion has a solid shape without being divided, and
the first conductive portion and the second conductive portion have a symmetric shape.

4. The semiconductor module according to claim 3 , wherein
the first lead frame and the first heat radiation substrate are disposed on one side of the first semiconductor chip to provide a component structure, the second lead frame and the second heat radiation substrate are disposed on the other side of the semiconductor chip to provide a component structure, and the component structure of the one side of the first semiconductor chip and the component structure of the other side of the first semiconductor chip are symmetric with respect to the first semiconductor chip, and
the second lead frame and the third heat radiation substrate are disposed on one side of the second semiconductor chip to provide a component structure, the third lead frame and the fourth heat radiation substrate are disposed on the other side of the second semiconductor chip to provide a component structure, and the component structure of the one side of the second semiconductor chip and the component structure of the other side of the second semiconductor chip are symmetric with respect to the second semiconductor chip.

5. The semiconductor module according to claim 3 , wherein
the second lead frame is formed with an opening between a portion on which the first semiconductor chip is disposed and a portion on which the second semiconductor chip is disposed.

6. The semiconductor module according to claim 3 , wherein
a snubber circuit is provided between the first lead frame and the third lead frame.

7. The semiconductor module according to claim 3 , wherein
the first terminal is a positive electrode terminal,
the third terminal is a negative electrode terminal, and
the positive electrode terminal and the negative electrode terminal are disposed next to each other.

8. The semiconductor module according to claim 3 , wherein
the resin part is formed with a recessed portion or a projected portion in between any two of the first terminal, the second terminal and the third terminal.

9. The semiconductor module according to claim 3 , wherein
the resin

Assignees

• Ishino Hiroshi
• Watanabe Tomokazu
• Denso Corp

Inventors

• Ishino Hiroshi
• Watanabe Tomokazu

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title