Program verify word line ramping delay for lower current consumption mode
US-2024395343-A1 · Nov 28, 2024 · US
US9239685B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9239685-B2 |
| Application number | US-201414327580-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 10, 2014 |
| Priority date | Apr 19, 2010 |
| Publication date | Jan 19, 2016 |
| Grant date | Jan 19, 2016 |
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A method for accessing a memory includes: utilizing a Flash memory to perform a plurality of sensing operations with a plurality of different sensing voltages respectively corresponding to the plurality of sensing operations; according to the plurality of sensing operations, generating a first digital value of a Flash cell of the Flash memory; according to the plurality of sensing operations and the first digital value, generating at least a second digital value of the Flash cell; and obtaining soft information of the Flash cell according to the second digital value. The first digital value and the second digital value are used for determining information of a same bit stored in the Flash cell, a number of possible bit(s) of the Flash cell directly corresponds to a number of possible states of the Flash cell, and the obtained soft information is used for performing soft decoding.
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What is claimed is: 1. A method for accessing a memory, the method comprising: utilizing a Flash memory to perform a plurality of sensing operations with a plurality of different sensing voltages respectively corresponding to the plurality of sensing operations; according to the plurality of sensing operations, generating a first digital value of a Flash cell of the Flash memory; according to the plurality of sensing operations and the generated first digital value, generating…
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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