Power module substrate with heat sink, and method for producing power module substrate with heat sink

Patent metadata

Field	Value
Publication number	US-9237682-B2
Application number	US-201314388560-A
Country	US
Kind code	B2
Filing date	Mar 29, 2013
Priority date	Mar 30, 2012
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer ( 50 ) having a Mg-containing compound ( 52 ) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer ( 50 ) is within a range from 5 μm to 80 μm.

First claim

The invention claimed is:

1. A power module substrate with a heat sink, comprising:
a power module substrate having a circuit layer disposed on one surface of an insulating layer, and
a heat sink bonded to an other surface of the power module substrate, wherein
a bonding surface of the heat sink and a bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy,
a metal layer, which is composed of a rolled sheet of aluminum or an aluminum alloy, is formed on an other surface of the insulating layer in the power module substrate, and the heat sink bonded to the metal layer,
a bonding layer having a Mg-containing compound (excluding MgO) which contains Mg dispersed in an Al-Si eutectic composition is formed at a bonding interface between the heat sink and the power module substrate,
a thickness of the bonding layer is within a range from not less than 5 μm to not more than 80 μm, and
a MgO content in the bonding layer is not more than 20% by area.

2. The power module substrate with a heat sink according to claim 1 , wherein
at least one of the bonding surface of the heat sink and the bonding surface of the power module substrate is composed of a Mg-containing aluminum alloy which contains Mg, and
a Mg reduced region having a reduced abundance ratio of Mg-containing compounds is formed near a bonding interface of the bonding surface composed of the Mg-containing aluminum alloy.

3. The power module substrate with a heat sink according to claim 1 , wherein the Mg-containing compound dispersed in the bonding layer comprises a MgSi-based compound or a MgAlO-based compound.

4. A method for producing a power module substrate with a heat sink comprising a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to an other surface of the power module substrate, the method comprising:
a step of disposing an Al-Si-based brazing material and Mg at a bonding interface between the heat sink and the power module substrate, laminating the heat sink and the power module substrate together,
a step of brazing the heat sink and the power module substrate at normal pressure in a nitrogen gas atmosphere with a pressure of at least 0.001 MPa but not more than 0.5 MPa applied in a lamination direction, and
a step of forming a bonding layer, having a Mg-containing compound (excluding MgO) which contains Mg dispersed in an Al-Si eutectic composition, at the bonding interface between the heat sink and the power module substrate, the bonding layer having a thickness within a range from not less than 5 μm to not more than 80 μm, wherein
a bonding surface of the heat sink and a bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy,
a metal layer, which is composed of a rolled sheet of aluminum or an aluminum alloy, is formed on an other surface of the insulating layer in the power module substrate, and the heat sink bonded to the metal layer,
the step of brazing is performed by not using a flux, and
a MgO content in the bonding layer is not more than 20% by area.

Assignees

• Mitsubishi Materials Corp

Inventors

• Nagatomo Yoshiyuki
• Ishizuka Hiroya
• Nagase Toshiyuki
• Kuromitsu Yoshirou
• Edo Masakazu
• Miyake Hideyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W40/611

  Bolts or screws · CPC title

• H10W40/255 Primary

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title